Beijing Silk Road Enterprise Management Services Co., Ltd.
| Output Current | 50mA |
| Fall time | 18us |
| Rise time | 18us |
| Vce Saturation(VCE(sat)) | 200mV@20mA,1mA |
| Operating Temperature | -55℃~+110℃ |
| Load Voltage | 35V |
| Reverse Voltage | 6V |
| Current transfer ratio | 600%;50% |
| Forward Current(If) | 60mA |
| Pd - Power Dissipation | 200mW |
| Number of Channels | 1 |
| Load Type | Phototransistor |
| Input type | DC |
| Isolation Voltage(Vrms) | 5kV |
| Description | 50mA 200mV@20mA,1mA 35V 6V DC DIP-4 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part # | GX817MC |
| Package | DIP-4 |
| Model Number | GX817MC |
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Product Specification
| Output Current | 50mA | Fall time | 18us |
| Rise time | 18us | Vce Saturation(VCE(sat)) | 200mV@20mA,1mA |
| Operating Temperature | -55℃~+110℃ | Load Voltage | 35V |
| Reverse Voltage | 6V | Current transfer ratio | 600%;50% |
| Forward Current(If) | 60mA | Pd - Power Dissipation | 200mW |
| Number of Channels | 1 | Load Type | Phototransistor |
| Input type | DC | Isolation Voltage(Vrms) | 5kV |
| Description | 50mA 200mV@20mA,1mA 35V 6V DC DIP-4 Transistor, Photovoltaic Output Optoisolators RoHS | Mfr. Part # | GX817MC |
| Package | DIP-4 | Model Number | GX817MC |
The GX817 series phototransistor photocouplers feature an infrared emitting diode optically coupled to a phototransistor detector. Housed in a compact 4-pin DIP package, these devices offer high isolation voltage (5000Vrms), excellent creepage distance (>7.62mm), and operation up to 110C. They are Halogen-Free (copper leadframe), RoHS compliant, and meet EU REACH standards. Available in wide-lead spacing and SMD options, the GX817 series is ideal for signal transmission between circuits of different potentials and impedances in applications such as programmable controllers, system appliances, telecommunication equipment, and home appliances.
| Parameter | Symbol | GX817 | GX817A | GX817B | GX817C | GX817D | GX817X | GX817Y | Unit | Condition |
| Absolute Maximum Ratings | ||||||||||
| Input Forward current | IF | 60 | mA | Ta=25 | ||||||
| Peak forward current (1us, pulse) | IFP | 1 | A | Ta=25 | ||||||
| Reverse voltage | VR | 6 | V | Ta=25 | ||||||
| Input Power dissipation | PD | 100 | mW | Ta=25 | ||||||
| Input Power dissipation Derating factor (above Ta = 100C) | 2.9 | mW/C | Ta=25 | |||||||
| Output Power dissipation | PC | 150 | mW | Ta=25 | ||||||
| Output Power dissipation Derating factor (above Ta = 100C) | 5.8 | mW/C | Ta=25 | |||||||
| Collector current | IC | 50 | mA | Ta=25 | ||||||
| Collector-Emitter voltage | VCEO | 35 | V | Ta=25 | ||||||
| Emitter-Collector voltage | VECO | 6 | V | Ta=25 | ||||||
| Total Power Dissipation | PTOT | 200 | mW | Ta=25 | ||||||
| Isolation Voltage*1 | VISO | 5000 | V rms | AC for 1 minute, R.H.= 40 ~ 60% R.H. | ||||||
| Operating Temperature | TOPR | -55 to 110 | C | |||||||
| Storage Temperature | TSTG | -55 to 125 | C | |||||||
| Soldering Temperature*2 | TSOL | 260 | C | For 10 seconds | ||||||
| Electro-Optical Characteristics | ||||||||||
| Forward Voltage | VF | - | 1.2 | 1.4 | - | - | - | - | V | IF = 20mA |
| Reverse Current | IR | - | - | 10 | - | - | - | - | A | VR = 4V |
| Input capacitance | Cin | - | 30 | 250 | - | - | - | - | pF | V = 0, f = 1kHz |
| Collector-Emitter dark current | ICEO | - | - | 100 | - | - | - | - | nA | VCE = 20V, IF = 0mA |
| Collector-Emitter breakdown voltage | BVCEO | 35 | - | - | - | - | - | - | V | IC = 0.1mA |
| Emitter-Collector breakdown voltage | BVECO | 6 | - | - | - | - | - | - | V | IE = 0.1mA |
| Current Transfer ratio | CTR | 50 | - | 600 | 80 | 130 | 200 | 300 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio | CTR | - | - | - | - | - | 400 | 600 | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio | CTR | - | 100 | - | - | - | - | - | % | IF = 5mA ,VCE = 5V |
| Current Transfer ratio | CTR | - | 150 | - | - | - | - | - | % | IF = 5mA ,VCE = 5V |
| Collector-Emitter saturation voltage | VCE(sat) | - | 0.1 | 0.2 | - | - | - | - | V | IF = 20mA ,IC = 1mA |
| Isolation resistance | RIO | 51010 | - | - | - | - | - | - | VIO = 500Vdc, 40~60% R.H. | |
| Floating capacitance | CIO | - | 0.6 | 1.0 | - | - | - | - | pF | VIO = 0, f = 1MHz |
| Cut-off frequency | fc | - | 80 | - | - | - | - | - | kHz | VCE = 5V, IC = 2mA RL = 100, -3dB |
| Rise time | tr | - | - | 18 | - | - | - | - | s | VCE = 2V, IC = 2mA, RL = 100 |
| Fall time | tf | - | - | 18 | - | - | - | - | s | VCE = 2V, IC = 2mA, RL = 100 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...
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