| Rise time | 20us |
| Output Current | 50mA |
| Fall time | 20us |
| Vce Saturation(VCE(sat)) | 300mV@10mA,20mA |
| Operating Temperature | -55℃~+125℃ |
| Load Voltage | 30V |
| Reverse Voltage | 2V |
| Current transfer ratio | -;- |
| Forward Current(If) | 40mA |
| Pd - Power Dissipation | - |
| Number of Channels | - |
| Load Type | Phototransistor |
| Input type | DC |
| Isolation Voltage(Vrms) | 1kV |
| Description | 50mA 300mV@10mA,20mA 30V 2V DC CLCC-4(5.59x3.81) Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part # | HCC242 |
| Package | CLCC-4(5.59x3.81) |
| Model Number | HCC242 |
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Product Specification
| Rise time | 20us | Output Current | 50mA |
| Fall time | 20us | Vce Saturation(VCE(sat)) | 300mV@10mA,20mA |
| Operating Temperature | -55℃~+125℃ | Load Voltage | 30V |
| Reverse Voltage | 2V | Current transfer ratio | -;- |
| Forward Current(If) | 40mA | Pd - Power Dissipation | - |
| Number of Channels | - | Load Type | Phototransistor |
| Input type | DC | Isolation Voltage(Vrms) | 1kV |
| Description | 50mA 300mV@10mA,20mA 30V 2V DC CLCC-4(5.59x3.81) Transistor, Photovoltaic Output Optoisolators RoHS | Mfr. Part # | HCC242 |
| Package | CLCC-4(5.59x3.81) | Model Number | HCC242 |
The HCPL-240 and HCPL-242 are optically coupled isolators, consisting of a Gallium Aluminum Arsenide LED and a silicon phototransistor mounted and coupled in a miniature surface mount hermetic leadless chip carrier. The HCPL-240 and HCPL-242 are identical except for the current transfer ratio. Electrical parameters are similar to the 4N22 and 4N24 registered devices. These solid-state couplers are ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is Vs = 9V, P = 275mW, IF = 20-50mA (adjusted to achieve P). No HTR is performed on this device.
| Parameter | Symbol | HCPL-240 | HCPL-242 | Units | Conditions | |
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | ||||||
| Input-to-Output Isolation Voltage | Viso | 1.0 kVac (1) | Vrms | Inputs shorted to outputs | ||
| Operating Temperature | Topr | -55 to +125 | C | |||
| Storage Temperature | Tstg | -65 to +150 | C | |||
| Soldering Temperature (vapor phase reflow for 30 sec.) | Tsolder | 215 | C | |||
| Soldering Temperature (heated collet for 5 sec.) | Tsolder | 260 | C | |||
| Input Diode | ||||||
| Forward Current | IF | 40 | mA | (65C below) | ||
| Reverse Voltage | VR | 2.0 | V | |||
| Power Dissipation | Pd | 60 | mW(2) | |||
| Output Phototransistor | ||||||
| Continuous Collector Current | IC | 50 | mA | |||
| Collector-Emitter Voltage | VCEO(3) | 30 | V | |||
| Emitter-Collector Voltage | VECO(4) | 5.0 | V | |||
| Power Dissipation | Pd | 300 | mW(5) | |||
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||||
| Input Diode | ||||||
| Forward Voltage | VF | 1.00 | 1.00 | V | IF = 10.0 mA, TA = 25C | |
| 0.70 | 0.70 | V | IF = 10.0 mA, TA = -55C | |||
| 1.00 | 1.00 | V | IF = 10.0 mA, TA = 100C | |||
| Reverse Current | IR | 100 | nA | VR = 2.0 V | ||
| Output Phototransistor | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO(3) | 30 | V | IC = 1.0 mA, IF = 0 | ||
| Emitter-Collector Breakdown Voltage | V(BR)ECO(4) | 5.0 | V | IC = 100 A, IF = 0 | ||
| Collector-Emitter Dark Current | IO(OFF) | 100 | nA | VCE = 20 V, IF = 0 | ||
| 100 | 100 | nA | VCE = 20 V, IF = 0, TA = 100C | |||
| Coupled | ||||||
| On-State Collector Current | IO(ON) | 0.15 | 0.40 | mA | VCE = 5.0 V, IF = 2.0 mA | |
| 2.5 | 10.0 | mA | VCE = 5.0 V, IF = 10.0 mA | |||
| 1.0 | 4.0 | mA | VCE = 5.0 V, IF = 10.0 mA, TA = -55C | |||
| 1.0 | 4.0 | mA | VCE = 5.0 V, IF = 10.0 mA, TA = 100C | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.30 | 0.30 | V | IC = 2.5 mA, IF = 20.0 mA (HCPL-240) / IC = 10.0 mA, IF = 20.0 mA (HCPL-242) | |
| Isolation Resistance (Input to Output) | RISO | 1011 | VISO = 1000 V (1) | |||
| Isolation Capacitance (Input to Output) | CISO | 5.0 | pF | VISO = 0 V, f = 1.0 MHz(1) | ||
| Output Rise Time | tr | 15.0 | 20.0 | ns | VCE = 10.0 V, IF = 10.0 mA, RL = 100 | |
| Output Fall Time | tf | 15.0 | 20.0 | ns | VCE = 10.0 V, IF = 10.0 mA, RL = 100 | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...
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