| Rise time | 20us |
| Output Current | 50mA |
| Fall time | 20us |
| Vce Saturation(VCE(sat)) | 300mV@20mA,2.5mA |
| Operating Temperature | -55℃~+125℃ |
| Load Voltage | 40V |
| Reverse Voltage | 2V |
| Current transfer ratio | -;- |
| Forward Current(If) | 40mA |
| Pd - Power Dissipation | 300mW |
| Number of Channels | - |
| Load Type | Phototransistor |
| Input type | DC |
| Isolation Voltage(Vrms) | 1kV |
| Description | 50mA 300mV@20mA,2.5mA 40V 2V DC TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part # | JANTXV4N48 |
| Package | TO-78-6 |
| Model Number | JANTXV4N48 |
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Product Specification
| Rise time | 20us | Output Current | 50mA |
| Fall time | 20us | Vce Saturation(VCE(sat)) | 300mV@20mA,2.5mA |
| Operating Temperature | -55℃~+125℃ | Load Voltage | 40V |
| Reverse Voltage | 2V | Current transfer ratio | -;- |
| Forward Current(If) | 40mA | Pd - Power Dissipation | 300mW |
| Number of Channels | - | Load Type | Phototransistor |
| Input type | DC | Isolation Voltage(Vrms) | 1kV |
| Description | 50mA 300mV@20mA,2.5mA 40V 2V DC TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS | Mfr. Part # | JANTXV4N48 |
| Package | TO-78-6 | Model Number | JANTXV4N48 |
This series of optically coupled isolators features an infrared emitting diode and a silicon phototransistor housed in a hermetically sealed TO-78 package. Designed for and harsh environments, these devices offer high-voltage isolation between input and output, electrical isolation in dirty environments, and are suitable for industrial, medical, and office equipment. The suffix "S" denotes that the collector is electrically isolated from the case. Devices like the J/JD/JDS 4E22, 4E23, and 4E24 are processed to MIL-STD-19500/486 and are JANTX registered and JAN qualified.
| Part Number | Isolation Voltage (kV) | IF (mA) Typ/Max | VCE (Volts) Max | MIL-STD-19500 Processing |
| J4E22 / JD4E22 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| JDY4E22 / JDYS4E22 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| J4E23 / JD4E23 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| JDY4E23 / JDYS4E23 | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| J4E24 | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| JDY4E24 / JDYS4E24 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/486 |
| Parameter | Symbol | Test Conditions | J/JD/JDS 4E22 | J/JD/JDS 4E23 | J/JD/JDS 4E24 | Units |
| Input Diode Forward Voltage | VF | IF = 10.0 mA | 1.50 - 1.70 | 1.50 - 1.70 | 1.50 - 1.70 | V |
| Input Diode Reverse Current | IR | VR = 2.0 V | 100 | 100 | 100 | nA |
| Output Phototransistor Breakdown Voltage Collector-Emitter | V(BR)CEO | IC = 1.0 mA, IF = 0 | 40 | 40 | 40 | V |
| Output Phototransistor Breakdown Voltage Collector-Base | V(BR)CBO | IC = 100 uA, IF = 0 | 45 | 45 | 45 | V |
| Output Phototransistor Breakdown Voltage Emitter-Base | V(BR)EBO | IE = 100 uA, IF = 0 | 7 | 7 | 7 | V |
| Collector-Emitter Dark Current | IO(OFF) | VCE = 20 V, IF = 0 | 100 | 100 | 100 | nA |
| Collector-Base Dark Current | IO(OFF) | VCE = 20 V, IF = 0 | 100 | 100 | 100 | nA |
| On-State Collector Current | IC(ON) | IF = 2.0 mA, VCE = 5 V | 1.00 | 2.50 | 4.00 | mA |
| Current Transfer Ratio | CTR | IF = 10.0 mA, VCE = 5 V | 100 | 100 | 100 | % |
| Isolation Resistance (Input-to-Output) | RIO | 10^11 | 10^11 | 10^11 | ||
| Isolation Capacitance (Input-to-Output) | CIO | f = 1.0 MHz | 5 | 5 | 5 | pF |
| Output Rise and Fall Time | tr, tf | IF = 10.0 mA, RL = 100 | 20.0 | 20.0 | 20.0 | s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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