Beijing Silk Road Enterprise Management Services Co., Ltd.
| Rise time | 20us |
| Output Current | 50mA |
| Fall time | 20us |
| Vce Saturation(VCE(sat)) | 300mV@20mA,10mA |
| Operating Temperature | -55℃~+125℃ |
| Load Voltage | 35V |
| Reverse Voltage | 2V |
| Current transfer ratio | -;25% |
| Forward Current(If) | 40mA |
| Pd - Power Dissipation | - |
| Number of Channels | - |
| Load Type | Phototransistor |
| Input type | DC |
| Isolation Voltage(Vrms) | 1kV |
| Description | 50mA 300mV@20mA,10mA 35V 2V DC TO-78-6 Transistor, Photovoltaic Output Optoisolators |
| Mfr. Part # | 4N24A |
| Package | TO-78-6 |
| Model Number | 4N24A |
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Product Specification
| Rise time | 20us | Output Current | 50mA |
| Fall time | 20us | Vce Saturation(VCE(sat)) | 300mV@20mA,10mA |
| Operating Temperature | -55℃~+125℃ | Load Voltage | 35V |
| Reverse Voltage | 2V | Current transfer ratio | -;25% |
| Forward Current(If) | 40mA | Pd - Power Dissipation | - |
| Number of Channels | - | Load Type | Phototransistor |
| Input type | DC | Isolation Voltage(Vrms) | 1kV |
| Description | 50mA 300mV@20mA,10mA 35V 2V DC TO-78-6 Transistor, Photovoltaic Output Optoisolators | Mfr. Part # | 4N24A |
| Package | TO-78-6 | Model Number | 4N24A |
This series of isolators features an infrared emitting diode and a silicon phototransistor housed in a hermetically sealed TO-78 package. Designed for and harsh environments, these devices offer high-voltage isolation between input and output, electrical isolation in dirty environments, and are suitable for industrial, medical, and office equipment. The suffix letter 'D' denotes that the collector is electrically isolated from the case. Devices with the 'D' or 'DS' suffix are processed to MIL-PRF-19500/486 or MIL-PRF-19500/548.
| Part Number | Isolation Voltage (kV) | CTR Min / Max | IF (mA) Typ/Max | Vce (Volts) Max | Max Processing |
|---|---|---|---|---|---|
| 4E22 or 4E22D | 1 | 10 / 40 | 35 | 486 | MIL-PRF-19500/486 |
| 4E23 or 4E23D | 20 | N/A | N/A | 35 | N/A |
| 4E24 or 4E24D | 40 | N/A | N/A | 35 | N/A |
| 4E47 or 4E47D | 50 | 1 / 40 | 40 | 548 | MIL-PRF-19500/548 |
| 4E48 or 4E48D | 100 | N/A | N/A | N/A | N/A |
| 4E49 or 4E49D | 200 | N/A | N/A | N/A | N/A |
| Parameter | 4E22/4E23/4E24 Series | 4E47/4E48/4E49 Series |
|---|---|---|
| Input Diode Forward Voltage (Vf) @ If = 10.0 mA | 0.80V Typ | 0.70V Typ |
| Input Diode Reverse Current (Ir) @ Vr = 2.0V | 100 nA | 100 nA |
| Output Phototransistor V(BR)CEO Collector-Emitter Breakdown Voltage | 35V | 40V |
| Output Phototransistor V(BR)CA Collector-Case Breakdown Voltage | 35V | 45V |
| Output Phototransistor V(BR)CE Emitter-Case Breakdown Voltage | 4V | 7.0V |
| Coupled On-State Collector Current @ If = 10.0 mA, Vce = 5.0V | 1.00 mA | N/A |
| Current Transfer Ratio (CTR) @ If = 10.0 mA, Vce = 5.0V | 300 | N/A |
| Isolation Resistance (Input-to-Output) | >10^11 | >10^11 |
| Isolation Capacitance (Input-to-Output) | 5 pF | N/A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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