Beijing Silk Road Enterprise Management Services Co., Ltd.
| Rise time | 20us |
| Output Current | - |
| Fall time | 20us |
| Vce Saturation(VCE(sat)) | 300mV@20mA,2.5mA |
| Operating Temperature | -55℃~+125℃ |
| Load Voltage | - |
| Reverse Voltage | - |
| Current transfer ratio | -;- |
| Forward Current(If) | - |
| Pd - Power Dissipation | - |
| Number of Channels | - |
| Load Type | - |
| Input type | - |
| Isolation Voltage(Vrms) | - |
| Description | 300mV@20mA,2.5mA TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part # | JAN4N49 |
| Package | TO-78-6 |
| Model Number | JAN4N49 |
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Product Specification
| Rise time | 20us | Output Current | - |
| Fall time | 20us | Vce Saturation(VCE(sat)) | 300mV@20mA,2.5mA |
| Operating Temperature | -55℃~+125℃ | Load Voltage | - |
| Reverse Voltage | - | Current transfer ratio | -;- |
| Forward Current(If) | - | Pd - Power Dissipation | - |
| Number of Channels | - | Load Type | - |
| Input type | - | Isolation Voltage(Vrms) | - |
| Description | 300mV@20mA,2.5mA TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS | Mfr. Part # | JAN4N49 |
| Package | TO-78-6 | Model Number | JAN4N49 |
This series of optically coupled isolators features an infrared emitting diode and a silicon phototransistor housed in a hermetically sealed TO-78 package. Designed for and harsh environments, these devices offer high-voltage isolation between input and output, electrical isolation in dirty environments, and are suitable for industrial, medical, and office equipment. The suffix 'S' denotes that the collector is electrically isolated from the case. Devices with part numbers including J, JDY, or JDYS are processed to MIL-PRF-19500/486 and are JANTX registered and JAN qualified.
| Part Number | Isolation Voltage (kV) | IF (mA) Typ/Max | V CE(V) Max | IF (mA) | VCE (V) | IC (mA) | hFE | R DI O () | C DIO (pF) | tr/tf (s) |
|---|---|---|---|---|---|---|---|---|---|---|
| J4E22 (Obsolete) | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| JDY4E22 (Obsolete) | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| JDYS4E22 (Obsolete) | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| J4E23 (Obsolete) | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| JDY4E23 (Obsolete) | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| JDYS4E23 | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| J4E24 | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| JDY4E24 | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| JDYS4E24 (Obsolete) | 1 | 10 / 40 | 40 | 10 | 5 | 2.5 | 100 | 1011 | 5 | 20.0 |
| J4E22 | 1 | 10 / 40 | 40 | 10 | 5 | 1.00 | 100 | 1011 | 5 | 20.0 |
| JDY4E22 | 1 | 10 / 40 | 40 | 10 | 5 | 1.00 | 100 | 1011 | 5 | 20.0 |
| JDYS4E22 | 1 | 10 / 40 | 40 | 10 | 5 | 1.00 | 100 | 1011 | 5 | 20.0 |
| J4E23 | 1 | 10 / 40 | 40 | 10 | 5 | 2.50 | 100 | 1011 | 5 | 20.0 |
| JDY4E23 | 1 | 10 / 40 | 40 | 10 | 5 | 2.50 | 100 | 1011 | 5 | 20.0 |
| JDYS4E23 | 1 | 10 / 40 | 40 | 10 | 5 | 2.50 | 100 | 1011 | 5 | 20.0 |
| J4E24 | 1 | 10 / 40 | 40 | 10 | 5 | 4.00 | 100 | 1011 | 5 | 20.0 |
| JDY4E24 | 1 | 10 / 40 | 40 | 10 | 5 | 4.00 | 100 | 1011 | 5 | 20.0 |
| JDYS4E24 | 1 | 10 / 40 | 40 | 10 | 5 | 4.00 | 100 | 1011 | 5 | 20.0 |
| Parameter | Rating | Unit |
|---|---|---|
| Storage Temperature Range | -65 to 150 | C |
| Operating Temperature Range | -55 to +125 | C |
| Input-to-Output Isolation Voltage | 1.00 | kV |
| Lead Soldering Temperature | 260 | C |
| Input Diode Forward Current | 40 | mA |
| Input Diode Reverse Voltage | 2 | V |
| Peak Forward Current (1s pulse width, 300pps) | 1 | A |
| Input Power Dissipation | 60 | mW |
| Continuous Collector Current | 50 | mA |
| Collector-Emitter Voltage | 40 | V |
| Collector-Case Voltage | 45 | V |
| Emitter-Case Voltage | 4 | V |
| Output Power Dissipation | 300 | mW |
| Symbol | Parameter | Test Conditions | J/JDY/JDYS 4E22 | J/JDY/JDYS 4E23 | J/JDY/JDYS 4E24 | Unit |
|---|---|---|---|---|---|---|
| VF | Forward Voltage | IF = 10.0 mA | 1.50 | 1.30 | 1.30 | V |
| IR | Reverse Current | VR = 2.0 V | 100 | 100 | 100 | nA |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC = 1.0 mA, II = 0 | 40 | 40 | 40 | V |
| V(BR)CES | Collector-Base Breakdown Voltage | IC = 100 A, II = 0 | 45 | 45 | 45 | V |
| V(BR)ECO | Emitter-Base Breakdown Voltage | IE = 100 A, II = 0 | 7 | 7 | 7 | V |
| IO(OFF) | Collector-Emitter Dark Current | VCE = 20 V, II = 0 | 100 | 100 | 100 | nA |
| IO(OFF) | Collector-Base Dark Current | VCE = 20 V, II = 0 | 100 | 100 | 100 | nA |
| IC(ON) | On-State Collector Current | IF = 10.0 mA, VCE = 5 V | 1.00 | 2.50 | 4.00 | mA |
| hFE | Current Gain | IC = 5.0 mA, IF = 10.0 mA | 100 | 100 | 100 | |
| R DIO | Diode Resistance (Input-to-Output) | 1011 | 1011 | 1011 | ||
| C DIO | Diode Capacitance (Input-to-Output) | VISO = 0 V, f = 1.0 MHz | 5 | 5 | 5 | pF |
| tr/tf | Output Rise and Fall Time | RL = 100 k | 20.0 | 20.0 | 20.0 | s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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