Beijing Silk Road Enterprise Management Services Co., Ltd.
| Rise time | 20us |
| Output Current | 50mA |
| Fall time | 20us |
| Vce Saturation(VCE(sat)) | 300mV@20mA,2.5mA |
| Operating Temperature | -55℃~+125℃ |
| Load Voltage | 40V |
| Reverse Voltage | 2V |
| Current transfer ratio | -;- |
| Forward Current(If) | 40mA |
| Pd - Power Dissipation | - |
| Number of Channels | - |
| Load Type | Phototransistor |
| Input type | - |
| Isolation Voltage(Vrms) | 1kV |
| Description | 50mA 300mV@20mA,2.5mA 40V 2V TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part # | JANTX4N49 |
| Package | TO-78-6 |
| Model Number | JANTX4N49 |
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Product Specification
| Rise time | 20us | Output Current | 50mA |
| Fall time | 20us | Vce Saturation(VCE(sat)) | 300mV@20mA,2.5mA |
| Operating Temperature | -55℃~+125℃ | Load Voltage | 40V |
| Reverse Voltage | 2V | Current transfer ratio | -;- |
| Forward Current(If) | 40mA | Pd - Power Dissipation | - |
| Number of Channels | - | Load Type | Phototransistor |
| Input type | - | Isolation Voltage(Vrms) | 1kV |
| Description | 50mA 300mV@20mA,2.5mA 40V 2V TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS | Mfr. Part # | JANTX4N49 |
| Package | TO-78-6 | Model Number | JANTX4N49 |
Each isolator in this series consists of an infrared emitting diode and a silicon phototransistor, mounted in a hermetically sealed TO-78 package. These devices are designed for and/or harsh environments. The suffix letter "S" denotes that the collector is electrically isolated from the case. The JN/Jedy/Jedys 4E22, 4E22, 4E23, 4E23, 4E24, and 4E24 devices are processed to MIL-STD-19500/486. This series of 4E products are JANS registered, JANTX qualified. Please contact your local representative for more information.
| Part Number | Isolation Voltage (kV) | IF (mA) Typ/Max | V CE (Volts) Max | MIL-STD-19500 Processing |
| JN4E22 or JN4E22 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/0 |
| Jedy4E22 or Jedy4E22 | 1 | 10 / 40 | 40 | MIL-STD-19500/0 |
| Jedys4E22 or Jedys4E22 | ||||
| JN4E23 or JN4E23 (Obsolete) | 1 | 10 / 40 | 40 | MIL-STD-19500/0 |
| Jedy4E23 (Obsolete) or Jedy4E23 | ||||
| Jedys4E23 or Jedys4E23 | ||||
| JN4E24 or JN4E24 | 1 | 10 / 40 | 40 | MIL-STD-19500/0 |
| Jedy4E24 or Jedy4E24 | ||||
| Jedys4E24 or Jedys4E24 (Obsolete) |
| Parameter | Symbol | Value | Units | Notes |
| Storage Temperature Range | -65 to 150 | C | ||
| Operating Temperature Range | -55 to +125 | C | ||
| Input-to-Output Isolation Voltage | V ISO | 1.00 | kV | (1) |
| Lead Soldering Temperature | 260 | C | (2) | |
| Input Diode Forward Current | IF | 40 | mA | (65C or below) |
| Input Diode Reverse Voltage | VR | 2 | V | |
| Peak Forward Current | IFP | 1 | A | (1 s pulse width, 300 pps) |
| Input Power Dissipation | 60 | mW | (3) | |
| Continuous Collector Current | IC | 50 | mA | |
| Collector-Emitter Voltage | V CE | 40 | V | |
| Collector-Case Voltage | V CC | 45 | V | |
| Emitter-Case Voltage | V EC | 4 | V | |
| Output Power Dissipation | 300 | mW | (4) |
| Parameter | Symbol | MIN | TYP | MAX | Units | Conditions | ||||||
| JN/Jedy/Jedys 4E22 | JN/Jedy/Jedys 4E23 | JN/Jedy/Jedys 4E24 | JN/Jedy/Jedys 4E22 | JN/Jedy/Jedys 4E23 | JN/Jedy/Jedys 4E24 | JN/Jedy/Jedys 4E22 | JN/Jedy/Jedys 4E23 | JN/Jedy/Jedys 4E24 | ||||
| Input Diode Forward Voltage | VF | 0.80 | 0.70 | 1.00 | 1.30 | 1.70 | 1.50 | V | IF = 10.0 mA (1) | |||
| Input Diode Reverse Current | IR | 100 | A | VR = 2.0 V | ||||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = 1.0 mA, IF = 0 | ||||||||
| Collector-Base Breakdown Voltage | V(BR)CBO | 45 | V | IC = 100 A, IF = 0 | ||||||||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 7 | V | IE = 100 A, IF = 0 | ||||||||
| Collector-Emitter Dark Current | IO(OFF) | 100 | 100 | 100 | nA | V CE = 20 V, IF = 0 | ||||||
| Collector-Base Dark Current | IO(OFF) | 100 | nA | V CE = 20 V, IF = 0 | ||||||||
| On-State Collector Current | IC(ON) | 0.15 | 0.20 | 0.40 | 1.00 | 2.50 | 4.00 | 2.50 | 5.00 | 10.0 | mA | IF = 10.0 mA, V CE = 5 V (1) |
| Collector-Emitter Saturation Voltage | V CE(SAT) | 0.30 | 0.30 | 0.30 | V | IF = 20 mA, IC = 2.5 mA | ||||||
| Current Transfer Ratio | CTR | 100 | % | IF = 5.0 mA, IC = 10.0 mA, IF = 0 | ||||||||
| Diode Resistance (Input-to-Output) | R | 10 | 10 | V = 1.0 V (3) | ||||||||
| Capacitance (Input-to-Output) | C | 5 | pF | IF = 0 V, f = 1.0 MHz (3) | ||||||||
| Output Rise and Fall Time | tr, tf | 20.0 | s | IF = 10.0 mA, RL = 100 | ||||||||
General Note: ADDI Electronics plc reserves the right to make changes in product specification without notice or liability. All information is subject to ADDI Electronics' own data and is considered accurate at time of going to print. ADDI Electronics APPLIED TECHNOLOGY 2900 Plano Parkway, Plano, TX 75074 Ph: +1 972 323 2200 www.addielectronics.com sensors@addielectronics.com Rev K 05/2022
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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