| Rise time | 20us |
| Output Current | 50mA |
| Fall time | 20us |
| Vce Saturation(VCE(sat)) | 300mV@20mA,10mA |
| Operating Temperature | -55℃~+150℃ |
| Load Voltage | 40V |
| Reverse Voltage | 2V |
| Current transfer ratio | -;- |
| Forward Current(If) | 40mA |
| Pd - Power Dissipation | - |
| Number of Channels | - |
| Load Type | Phototransistor |
| Input type | DC |
| Isolation Voltage(Vrms) | - |
| Description | 50mA 300mV@20mA,10mA 40V 2V DC TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part # | HCC1000 |
| Package | TO-78-6 |
| Model Number | HCC1000 |
View Detail Information
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Product Specification
| Rise time | 20us | Output Current | 50mA |
| Fall time | 20us | Vce Saturation(VCE(sat)) | 300mV@20mA,10mA |
| Operating Temperature | -55℃~+150℃ | Load Voltage | 40V |
| Reverse Voltage | 2V | Current transfer ratio | -;- |
| Forward Current(If) | 40mA | Pd - Power Dissipation | - |
| Number of Channels | - | Load Type | Phototransistor |
| Input type | DC | Isolation Voltage(Vrms) | - |
| Description | 50mA 300mV@20mA,10mA 40V 2V DC TO-78-6 Transistor, Photovoltaic Output Optoisolators RoHS | Mfr. Part # | HCC1000 |
| Package | TO-78-6 | Model Number | HCC1000 |
These devices are similar to Opteks 4N series of opto isolators, processed per MIL-PRF-19500 TXV level and capable of modification per customer SCDs. Each device consists of an IR LED and NPN transistor housed in a hermetic TO-78 metal can (HCC1000) or a 6-pin SMT LCC package (HCC1001). They are designed for circuit electrical isolation in demanding space applications such as satellites, launch vehicles, space vehicles, and planetary rovers. Key features include Total Ionizing Dose (TID) capability to 100Krad(Si)/cm, neutron capability to 1E12 neutrons (14MeV), 1 KV electrical isolation, and a base contact for conventional transistor biasing.
| Parameter | Symbol | Min | Typ | Max | Units | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Storage Temperature Range | -55 | 150 | C | TA = 25 C unless otherwise noted | ||
| Operating Temperature Range | -55 | 150 | C | TA = 25 C unless otherwise noted | ||
| Input-to-Output Isolation Voltage | 1.00 | kVDC | Measured with input leads shorted together and output leads shorted together. | |||
| Lead Soldering Temperature (TO-78 Metal Can) | 260 | C | [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] | |||
| Soldering Temperature (SMD) | 215 | C | Vapor Phase Reflow for 30 seconds | |||
| Input Diode (LED) Forward DC Current | IF | 40 | mA | (65 C or below) | ||
| Input Diode (LED) Reverse Voltage | 2 | V | ||||
| Input Diode (LED) Power Dissipation | 60 | mW | Derate linearly 1.0 mW/C above 65 C. | |||
| Output Phototransistor Continuous Collector Current | IC | 50 | mA | |||
| Output Phototransistor Collector-Emitter Voltage | VCEO | 40 | V | |||
| Output Phototransistor Collector-Base Voltage | VCBO | 45 | V | |||
| Output Phototransistor Emitter-Base Voltage | VEBO | 7.0 | V | |||
| Output Phototransistor Power Dissipation | 300 | mW | Derate linearly 3.0 mW/C above 25 C. | |||
| Performance Electrical Characteristics | ||||||
| Forward Voltage | VF | 0.80 | 1.00 | 1.70 | V | IF = 10.0 mA |
| Forward Voltage | VF | 0.70 | 1.9 | 1.50 | V | IF = 10.0 mA, TA = -55 C |
| Forward Voltage | VF | 1.50 | V | IF = 10.0 mA, TA = 125 C | ||
| Reverse Current | IR | 100 | A | VR= 2.0 V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = 1.0 mA, IB= 0, IF= 0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 45 | V | IC = 100 A, IB= 0, IF= 0 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 7 | V | IE = 100 A, IC= 0, IF= 0 | ||
| Collector-Emitter Dark Current | IC(OFF) 1 | 100 | nA | VCE = 20 V, IB= 0, IF= 0 | ||
| Collector-Emitter Dark Current | IC(OFF) 2 | 100 | A | VCE = 20 V, IB= 0, IF= 0, TA = 100 C | ||
| Collector-Base Dark Current | ICB(OFF) | 10 | nA | VCB = 20 V, IE= 0, IF= 0 | ||
| On-State Collector Current | IC(ON) | 1 | 15 | mA | IF = 1.0 mA, VCE = 1.0 V, IB = 0 | |
| On-State Collector Current | IC(ON) | 10 | 15 | mA | IF = 15.0 mA, VCE = 1.0 V, IB = 0 | |
| On-State Collector Current | IC(ON) | 2.8 | mA | IF = 10.0 mA, VCE = 5.0 V, IB = 0 | ||
| On-State Collector Current | IC(ON) | 2.0 | mA | IF = 15.0 mA, VCE = 5.0 V, IB = 0 | ||
| On-State Collector Current | IC(ON) | mA | IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = -55 C | |||
| On-State Collector Current | IC(ON) | mA | IF = 2.0 mA, VCE = 5.0 V, IB = 0, TA = 100 C | |||
| On-State Collector Base | ICB(ON) | 30 | A | VCB = 5 V, IE = 0, IF = 10 mA | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.30 | V | IF = 20.0 mA, IC = 10.0 mA, IB = 0 | ||
| DC Current Gain | HFE | 100 | VCE = 5.0 V , IC = 10.0 mA, IF = 0 mA | |||
| Resistance (Input-to-Output) | RIO | 1011 | VI-O = 1000 VDC | |||
| Capacitance (Input-to-Output) | CIO | 5 | pF | VI-O = 0 V, f = 1.0 MHz | ||
| Rise and Fall Time | TR, TF | 20 | s | VCC = 10.0 V , IF = 10.0 mA, RL = 100 | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...
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