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China CT MICRO CT816D3S T3 H DC input phototransistor optocoupler with iron lead frame
China CT MICRO CT816D3S T3 H DC input phototransistor optocoupler with iron lead frame

  1. China CT MICRO CT816D3S T3 H DC input phototransistor optocoupler with iron lead frame

CT MICRO CT816D3S T3 H DC input phototransistor optocoupler with iron lead frame

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Description SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators RoHS
Mfr. Part # CT816D3(S)(T3)-H
Package SOP-4-2.54mm
Model Number CT816D3(S)(T3)-H

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  1. Product Details
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Product Specification

Description SOP-4-2.54mm Transistor, Photovoltaic Output Optoisolators RoHS Mfr. Part # CT816D3(S)(T3)-H
Package SOP-4-2.54mm Model Number CT816D3(S)(T3)-H

Product Overview

The CT816D3 series is a DC input phototransistor optocoupler featuring a gallium arsenide infrared-emitting diode coupled to a phototransistor in a 4-lead DIP package. It offers high isolation of 5000 VRMS and is designed for applications requiring efficient signal coupling with a transistor output. Key features include a wide operating temperature range of -55 C to 110 C and the availability of CTR flexibility through order information. This optocoupler is suitable for use in switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.

Product Attributes

  • Brand: CT Micro
  • Product Type: Phototransistor Optocoupler
  • Input Type: DC Input
  • Output Type: Transistor Output
  • Package Type: 4-Pin DIP
  • Material Option: Green (G) or Non-green
  • Lead Frame Option: Iron (H) or Copper (None)

Technical Specifications

Parameter Conditions Min Typ Max Units Notes
Absolute Maximum Ratings
Isolation Voltage (VISO) 5000 VRMS
Total Power Dissipation (PTOT) 200 mW
Operating Temperature (TOPR) -55 110 C
Storage Temperature (TSTG) -55 150 C
Soldering Temperature (TSOL) 260 C
Emitter Forward Current (IF) 60 mA
Emitter Peak Transient Current (IF(TRANS)) 1s P.W, 300pps 1 A
Emitter Reverse Voltage (VR) 6 V
Emitter Power Dissipation (PD) 100 mW
Detector Power Dissipation (PD) 150 mW
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Collector Breakdown Voltage (BVECO) 6 V
Collector Current (IC) 50 mA
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage (VF) IF=10mA 1.24 1.4 V
Reverse Current (IR) VR = 6V 5 A
Input Capacitance (CIN) f=1MHz 30 pF
Collector-Emitter Breakdown Voltage (BVCEO) IC= 100A 80 V
Emitter-Collector Breakdown Voltage (BVECO) IE= 100A 6 V
Collector-Emitter Dark Current (ICEO) VCE= 20V, IF=0mA 100 nA
Current Transfer Ratio (CTR) IF= 5mA, VCE= 5V 300 450 %
Current Transfer Ratio (CTR) IF= 0.1mA, VCE= 0.4V 10 30 %
Collector-Emitter Saturation Voltage (VCE(SAT)) IF= 20mA, IC= 1mA 0.1 0.2 V
Isolation Resistance (RIO) VIO= 500VDC 5x1010
Isolation Capacitance (CIO) f=1MHz 0.5 1 pF
Switching Characteristics
Rise Time (tr) IC= 2mA, VCE= 2V, RL= 100 6 s
Fall Time (tf) 8 s

1810010618_CT-MICRO-CT816D3-S-T3-H_C191927.pdf

Company Details

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  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...

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  • Beijing Silk Road Enterprise Management Services Co., Ltd.
  • 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
  • https://www.icisolator.com/

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