Beijing Silk Road Enterprise Management Services Co., Ltd.
| Rise time | 3us@2mA,100Ω |
| Fall time | 4.7us@2mA,100Ω |
| Output Current | - |
| Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA |
| Operating Temperature | -55℃~+100℃ |
| Load Voltage | 70V |
| Reverse Voltage | 6V |
| Load Type | Phototransistor |
| Voltage - Forward(Vf) | 1.2V |
| Input type | DC |
| Isolation Voltage(Vrms) | 4kV |
| Number of Channels | 2 |
| Description | 400mV@2.5mA,10mA 70V 6V 1.2V DC SO-8 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part # | ILD206T |
| Package | SO-8 |
| Model Number | ILD206T |
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Product Specification
| Rise time | 3us@2mA,100Ω | Fall time | 4.7us@2mA,100Ω |
| Output Current | - | Vce Saturation(VCE(sat)) | 400mV@2.5mA,10mA |
| Operating Temperature | -55℃~+100℃ | Load Voltage | 70V |
| Reverse Voltage | 6V | Load Type | Phototransistor |
| Voltage - Forward(Vf) | 1.2V | Input type | DC |
| Isolation Voltage(Vrms) | 4kV | Number of Channels | 2 |
| Description | 400mV@2.5mA,10mA 70V 6V 1.2V DC SO-8 Transistor, Photovoltaic Output Optoisolators RoHS | Mfr. Part # | ILD206T |
| Package | SO-8 | Model Number | ILD206T |
The ILD205T, ILD206T, ILD207T, ILD211T, and ILD213T are dual-channel optocouplers featuring a gallium arsenide infrared LED and a silicon NPN phototransistor. They enable signal transmission with high electrical isolation between input and output, suitable for high-density surface-mounting applications due to their SOIC-8 package. The devices offer a specified minimum and maximum CTR for precise electrical design and a high BVCEO of 70 V for increased safety margin.
| Part Number | Agency Certified/Package | CTR (%) (10 mA) | CTR (%) (1 mA) | Isolation Test Voltage | BVCEO |
| ILD205T | UL, cUL / SOIC-8 | 40 to 80 | 13 to 30 | 4000 VRMS | 70 V |
| ILD206T | UL, cUL / SOIC-8 | 63 to 125 | 22 to 45 | 4000 VRMS | 70 V |
| ILD207T | UL, cUL / SOIC-8 | 100 to 200 | 34 to 70 | 4000 VRMS | 70 V |
| ILD211T | UL, cUL / SOIC-8 | 20 | - | 4000 VRMS | 70 V |
| ILD213T | UL, cUL / SOIC-8 | 100 | - | 4000 VRMS | 70 V |
| Parameter | Test Condition | Symbol | Value | Unit |
| Peak reverse voltage | VR | 6 | V | |
| Peak pulsed current | 1 s, 300 pps | 1 | A | |
| Continuous forward current per channel | IF | 30 | mA | |
| Power dissipation | Pdiss | 50 | mW | |
| Collector emitter breakdown voltage | BVCEO | 70 | V | |
| Emitter collector breakdown voltage | BVECO | 7 | V | |
| Power dissipation per channel | Pdiss | 125 | mW | |
| Total package dissipation | (2 LEDs and 2 detectors, 2 channels) | Ptot | 350 | mW |
| Storage temperature | Tstg | -55 to +150 | C | |
| Operating temperature | Tamb | -55 to +100 | C | |
| Soldering time from 260 C | (1) | Tsld | 10 | s |
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Forward voltage | IF = 10 mA | VF | - | 1.2 | 1.55 | V |
| Reverse current | VR = 6 V | IR | - | 0.1 | 100 | A |
| Capacitance | VR = 0 V | CO | - | 25 | - | pF |
| Collector emitter breakdown voltage | IC = 10 A | BVCEO | 70 | - | - | V |
| Emitter collector breakdown voltage | IE = 10 A | BVECO | 7 | - | - | V |
| Collector emitter leakage current | VCE = 10 V, IF = 0 A | ICEO | - | 5 | 50 | nA |
| Collector emitter capacitance | VCE = 0 V | CCE | - | 10 | - | pF |
| Collector emitter saturation voltage | IF = 10 mA, IC = 2.5 mA | VCEsat | - | - | 0.4 | V |
| Capacitance (input to output) | CIO | - | 0.5 | - | pF |
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Delay time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | td | - | 3 | - | s |
| Rise time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | tr | - | 3 | - | s |
| Fall time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | tf | - | 4.7 | - | s |
| Storage time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | ts | - | 0.3 | - | s |
| Turn-on time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | ton | - | 6 | - | s |
| Turn-off time | VS = 5 V, IC = 2 mA, RL = 100 , (see figure 1) | toff | - | 5 | - | s |
| Turn-on time | VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) | ton | - | 3 | - | s |
| Turn-off time | VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 2) | toff | - | 10 | - | s |
| Parameter | Test Condition | Symbol | Value | Unit |
| Climatic classification | According to IEC 68 part 1 | 55/100/21 | ||
| Comparative tracking index | CTI | 175 | ||
| Tested withstanding isolation voltage | According to UL1577, t = 1 s | VISO | 4000 | VRMS |
| Maximum transient isolation voltage | According to DIN EN 60747-5-5 | VIOTM | 6000 | Vpeak |
| Maximum repetitive peak isolation voltage | According to DIN EN 60747-5-5 | VIORM | 560 | Vpeak |
| Isolation resistance | Tamb = 25 C, VIO = 500 V | RIO | 1012 | |
| Isolation resistance | Tamb = 100 C, VIO = 500 V | RIO | 1011 | |
| Output safety power | PSO | 350 | mW | |
| Input safety current | ISI | 150 | mA | |
| Input safety temperature | TS | 165 | C | |
| Creepage distance | DIP-6, option 6 | 4 | mm | |
| Clearance distance | DIP-6, option 6 | 4 | mm | |
| Insulation thickness | 0.2 | mm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...
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