| Fall time | - |
| Output Current | 50mA |
| Rise time | - |
| Vce Saturation(VCE(sat)) | - |
| Operating Temperature | -55℃~+100℃ |
| Load Voltage | 70V |
| Reverse Voltage | 6V |
| Current transfer ratio | 40%;100% |
| Voltage - Forward(Vf) | 1.2V |
| Forward Current(If) | 60mA |
| Number of Channels | 1 |
| Load Type | Phototransistor |
| Input type | DC |
| Isolation Voltage(Vrms) | 5kV |
| Description | 50mA 70V 6V 1.2V DC DIP-6 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part # | 4N35 |
| Package | DIP-6 |
| Model Number | 4N35 |
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Product Specification
| Fall time | - | Output Current | 50mA |
| Rise time | - | Vce Saturation(VCE(sat)) | - |
| Operating Temperature | -55℃~+100℃ | Load Voltage | 70V |
| Reverse Voltage | 6V | Current transfer ratio | 40%;100% |
| Voltage - Forward(Vf) | 1.2V | Forward Current(If) | 60mA |
| Number of Channels | 1 | Load Type | Phototransistor |
| Input type | DC | Isolation Voltage(Vrms) | 5kV |
| Description | 50mA 70V 6V 1.2V DC DIP-6 Transistor, Photovoltaic Output Optoisolators RoHS | Mfr. Part # | 4N35 |
| Package | DIP-6 | Model Number | 4N35 |
This datasheet presents Vishay industry-standard single-channel phototransistor couplers, including the 4N35, 4N36, 4N37, and 4N38 families. Each optocoupler comprises a gallium arsenide infrared LED and a silicon NPN phototransistor. These devices offer high isolation performance, achieved through Vishay's double molding isolation manufacturing process and adherence to the ISO9001 quality program. They are available in lead-formed configurations suitable for surface mounting and are compliant with RoHS Directive 2002/95/EC and WEEE 2002/96/EC. Applications include AC mains detection, reed relay driving, switch mode power supply feedback, telephone ring detection, logic ground isolation, and logic coupling with high-frequency noise rejection.
| Parameter | Test Condition | Symbol | 4N35 (MIN) | 4N35 (TYP) | 4N35 (MAX) | 4N36 (MIN) | 4N36 (TYP) | 4N36 (MAX) | 4N37 (MIN) | 4N37 (TYP) | 4N37 (MAX) | 4N38 (MIN) | 4N38 (TYP) | 4N38 (MAX) | Unit |
| INPUT | |||||||||||||||
| Forward voltage | IF = 10 mA | VF | 1.2 | 1.5 | 1.2 | 1.5 | 1.2 | 1.5 | 1.2 | 1.5 | V | ||||
| Forward voltage | IF = 10 mA, Tamb = - 55 C | VF | 0.9 | 1.3 | 1.7 | 0.9 | 1.3 | 1.7 | 0.9 | 1.3 | 1.7 | 0.9 | 1.3 | 1.7 | V |
| Reverse current | VR = 6 V | IR | 0.1 | 10 | 0.1 | 10 | 0.1 | 10 | 0.1 | 10 | A | ||||
| Capacitance | VR = 0 V, f = 1 MHz | CO | 25 | 25 | 25 | 25 | pF | ||||||||
| OUTPUT | |||||||||||||||
| Collector emitter breakdown voltage | IC = 1 mA | BVCEO | 30 | 30 | 30 | 80 | V | ||||||||
| Emitter base breakdown voltage | IE = 100 A | BVECO | 7 | 7 | 7 | 7 | V | ||||||||
| Collector base breakdown voltage | IC = 100 A, IB = 1 A | BVCBO | 70 | 70 | 70 | 80 | V | ||||||||
| Collector emitter leakage current | VCE = 10 V, IF = 0 | ICEO | 50 | 50 | 50 | 50 | nA | ||||||||
| Collector emitter leakage current | VCE = 60 V, IF = 0 | ICEO | 50 | nA | |||||||||||
| Collector emitter leakage current | VCE = 30 V, IF = 0, Tamb = 100 C | ICEO | 500 | 500 | 500 | 500 | A | ||||||||
| Collector emitter leakage current | VCE = 60 V, IF = 0, Tamb = 100 C | ICEO | 6 | A | |||||||||||
| Collector emitter capacitance | VCE = 0 | CCE | 6 | 6 | 6 | 6 | pF | ||||||||
| COUPLER | |||||||||||||||
| Isolation test voltage | t = 1 s | VISO | 5000 | 5000 | 5000 | 5000 | VRMS | ||||||||
| Creepage distance | 7 | 7 | 7 | 7 | mm | ||||||||||
| Clearance distance | 7 | 7 | 7 | 7 | mm | ||||||||||
| Isolation thickness | between emitter and detector | 0.4 | 0.4 | 0.4 | 0.4 | mm | |||||||||
| Comparative tracking index | DIN IEC 112/VDE 0303, part 1 | 175 | 175 | 175 | 175 | ||||||||||
| Isolation resistance | VIO = 500 V, Tamb = 25 C | RIO | 1012 | 1012 | 1012 | 1012 | |||||||||
| Isolation resistance | VIO = 500 V, Tamb = 100 C | RIO | 1011 | 1011 | 1011 | 1011 | |||||||||
| CURRENT TRANSFER RATIO (Tamb = 25 C) | |||||||||||||||
| CTRdc | VCE = 10 V, IF = 10 mA | 100 | 100 | 100 | % | ||||||||||
| CTRdc | VCE = 10 V, IF = 20 mA | 20 | % | ||||||||||||
| CTRdc | VCE = 10 V, IF = 10 mA, TA = - 55 C to + 100 C | 40 | 50 | 40 | 50 | 40 | 50 | % | |||||||
| CTRdc | VCE = 10 V, IF = 20 mA | 30 | % | ||||||||||||
| SWITCHING CHARACTERISTICS (Tamb = 25 C) | |||||||||||||||
| Turn-on time | VCC = 5 V, IC = 2 mA, RL = 100 | ton | 10 | 10 | 10 | 10 | s | ||||||||
| Turn-off time | VCC = 5 V, IC = 2 mA, RL = 100 | toff | 10 | 10 | 10 | 10 | s | ||||||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun... Beijing Silk Road Enterprise Management Services Co.,Ltd. is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. Foun...
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