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China HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc
China HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc

  1. China HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc

HMC903LP3E is a GaAs pHEMT MMIC Amplifier (LNA) from Analog Devices Inc

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  2. Price: 20 usd
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Payment Terms T/T
MFR ADI
Product Number HMC903LP3E
Description RF Amplifier IC General Purpose 6GHz ~ 17GHz 16-QFN (3x3)

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Product Specification

Payment Terms T/T MFR ADI
Product Number HMC903LP3E Description RF Amplifier IC General Purpose 6GHz ~ 17GHz 16-QFN (3x3)
High Light GaAs pHEMT MMIC LNA amplifierAnalog Devices HMC903LP3E amplifierlow noise amplifier with GaAs

The HMC903LP3E is a GaAs pHEMT MMIC (Gallium Arsenide Pseudomorphic High-Electron-Mobility Transistor Monolithic Microwave Integrated Circuit) Low Noise Amplifier (LNA) from Analog Devices Inc. It operates over a broad frequency range of 6 GHz to 17 GHz and is housed in a compact, 3x3 mm, 16-lead QFN (Quad Flat No-leads) surface-mount package.

This self-biased amplifier is designed for high-frequency applications requiring low noise, high gain, and excellent linearity.

HMC903LP3E Integrated Circuit
Key Features
Feature Category Specification Details
Frequency Range 6 GHz to 17 GHz
Gain 18 dB to 18.5 dB (Typ.)
Noise Figure (NF) 1.7 dB (Typ., 6-16 GHz)
Output Power (P1dB) +14 dBm to +14.5 dBm (Typ.)
Output IP3 (OIP3) +25 dBm (Typ.)
Supply Voltage +3.5 V (Single supply, 4.5V max)
Supply Current 80 mA (Typ.),159 110 mA (Max.)
Power Consumption ~280 mW (Typ.)
Input/Output Impedance 50 Ω (Internally matched, DC-blocked)
Bias Control Self-biased with optional bias control for reduced IDQ
Package 16-lead QFN/LFCSP (3mm x 3mm with exposed pad)
Operating Temperature -40°C to +85°C24 (Some sources note -55°C to +85°C)
Applications

The HMC903LP3E is designed for high-frequency microwave systems where low noise and high linearity are critical:

  1. Point-to-Point & Point-to-Multipoint Radio Links:

    • Used in microwave backhaul radios for cellular infrastructure and data links due to its wide bandwidth and high performance.

  2. Military, Aerospace, and Space Systems:

    • Employed in electronic warfare (EW), radar systems, and satellite communications (SATCOM/VSAT) due to its robustness and performance across a wide temperature range.

  3. Test and Measurement Equipment:

    • Ideal for signal generators, spectrum analyzers, and network analyzers as a low-noise gain stage.

  4. Local Oscillator (LO) Driver:

    • The +14.5 dBm P1dB output power makes it suitable for driving balanced, I/Q, or image-rejection mixers.

Key Strengths and Advantages
  • Low Noise Figure (1.7 dB): Essential for maintaining high signal integrity and sensitivity in receiver front-ends.

  • High Linearity (OIP3 = +25 dBm): Minimizes intermodulation distortion in dense signal environments.

  • High Integration and Ease of Use: The self-biasing architecture and internal 50-ohm matching on both input and output simplify design and reduce external component count. The DC-blocked I/O ports further enhance design simplicity15.

  • Compact Form Factor: The small 3x3 mm QFN package is suitable for high-density PCB designs common in modern RF systems.

  • Wide Bandwidth: Covers multiple microwave bands (C, X, Ku) with a single component, offering design flexibility.

Company Details

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Who We AreFounded in 2009, Berton Electronics Limited has grown into a globally recognized distributor of electronic components, trusted by enterprises, research institutions, and enthusiasts across 50+ countries.  As an authorized partner to 500+ industry-leading brands—including TI, STM... Who We AreFounded in 2009, Berton Electronics Limited has grown into a globally recognized distributor of electronic components, trusted by enterprises, research institutions, and enthusiasts across 50+ countries.  As an authorized partner to 500+ industry-leading brands—including TI, STM...

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  • Berton Electronics Limited
  • Room 905 Dong Le Building , NanJi Road , Luohu District, Shenzhen,China.
  • https://www.integratedcircuitsics.com/

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