Shenzhen Zhaocun Electronics Co., Ltd.
Products
Manufacturer of a wide range of products which include IPB0401NM5S Semiconductor Diode Transistor Electronics Component TRENCH 100V,FGD3N60UNDF Discrete Semiconductor Products IGBT NPT 600V 6 A 60W Surface Mount TO-252AA,FDC6321C ...
MOQ: 1000 PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 20K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 1000 PCS/Tape |
| Product Number | IPB0401NM5S |
| Manufacturer | Infineon Technologies |
| Category | Single FETs, MOSFETs |
| Minimum operating temperature | -30C |
| Maximum operating temperature | 125C |
| Minimum supply voltage | 3.5V |
| Maximum supply voltage | 8V |
| length | 1.3 mm |
| width | 4.8 mm |
| height | 1.7mm |
| Brand Name | INFINEON |
| Model Number | IPB0401NM5S |
| Certification | RoHS |
| Place of Origin | Infineon Technologies |
MOQ: 2500PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 2.5K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 2500PCS/Tape |
| Manufacturer | onsemi |
| Category | Single IGBTs |
| Product Number | FGD3N60UNDF |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 6A |
| Current - Collector Pulsed (Icm) | 9A |
| Vce(on) (Max) @ Vge, Ic | 2.52V @ 15V, 3A |
| Power - Max | 60W |
| Switching Energy | 52µJ (on), 30µJ (off) |
| Input Type | Standard |
| Gate Charge | 1.6 nC |
| Td (on/off) @ 25°C | 5.5ns/22ns |
| Test Condition | 400V, 3A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 21 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| Brand Name | onsemi |
| Model Number | FGD3N60UNDF |
| Certification | RoHS |
| Place of Origin | United States |
MOQ: 3000PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 30K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 3000PCS/Tape |
| Manufacturer | onsemi |
| Category | FET, MOSFET Arrays |
| Product Number | FDC6321C |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 680mA, 460mA |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | SuperSOT™-6 |
| Brand Name | onsemi |
| Model Number | FDC6321C |
| Certification | RoHS |
| Place of Origin | United States |
MOQ: 4800 PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 45K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 4800PCS/Tube |
| Category | Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | HEXFET®, StrongIRFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 217A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 132A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6680 pF @ 25 V |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric ME |
| Brand Name | Infineon Technologies |
| Model Number | IRF7480MTRPBF |
| Certification | RoHS |
| Place of Origin | United States |
MOQ: 1000 PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 3K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 1000 PCS/Tube |
| Category | Single FETs, MOSFETs |
| Mfr | onsemi |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 28A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 20 V |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | ATPAK |
| Package / Case | ATPAK (2 Leads+Tab) |
| Brand Name | onsemi |
| Model Number | ATP114-TL-H |
| Certification | RoHS |
| Place of Origin | United States |
MOQ: 50 PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 6K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 50 PCS/Tube |
| Category | Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |
| Power Dissipation (Max) | 277.8W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IPP65R110 |
| Brand Name | Infineon Technologies |
| Model Number | BUF420AW |
| Certification | RoHS |
| Place of Origin | United States |
MOQ: 30 PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 18K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 30 PCS/Tube |
| Category | Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | CoolSiC |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 8.5A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 707 pF @ 800 V |
| Power Dissipation (Max) | 115W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-4-1 |
| Package / Case | TO-247-4 |
| Brand Name | Infineon Technologies |
| Model Number | IMZ120R090M1H |
| Certification | RoHS |
| Place of Origin | United States |
MOQ: 50 PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 6K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 50 PCS/Tube |
| Category | Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V |
| Power Dissipation (Max) | 277.8W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Brand Name | Infineon Technologies |
| Model Number | IPP65R110CFDA |
| Certification | RoHS |
| Place of Origin | United States |
MOQ: 2500PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 7.5K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 2500PCS/Tape |
| Manufacturer | onsemi |
| Category | FET, MOSFET Arrays |
| Product Number | FDS3992 |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 25V |
| Power - Max | 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Brand Name | onsemi |
| Model Number | FDS3992 |
| Certification | RoHS |
| Place of Origin | United States |
MOQ: 30 PCS
Price: Negotiable
| Payment Terms | L/C, D/A, D/P, T/T |
| Supply Ability | 6K PCS |
| Delivery Time | 2-3 DAYS |
| Packaging Details | 30 PCS/Tube |
| Category | Bipolar Transistors - BJT |
| Mfr | STMicroelectronics |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4A, 20A |
| Power - Max | 200 W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Brand Name | ST |
| Model Number | BUF420AW |
| Certification | RoHS |
| Place of Origin | Malaysia |
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