| Payment Terms | L/C, D/A, D/P, T/T | 
| Supply Ability | 6K PCS | 
| Delivery Time | 2-3 DAYS | 
| Packaging Details | 50 PCS/Tube | 
| Category | Single FETs, MOSFETs | 
| Mfr | Infineon Technologies | 
| Series | Automotive, AEC-Q101, CoolMOS™ | 
| Product Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 650V | 
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V | 
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA | 
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V | 
| Power Dissipation (Max) | 277.8W (Tc) | 
| Operating Temperature | -40°C ~ 150°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | PG-TO220-3 | 
| Brand Name | Infineon Technologies | 
| Model Number | IPP65R110CFDA | 
| Certification | RoHS | 
| Place of Origin | United States | 
View Detail Information
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Product Specification
| Payment Terms | L/C, D/A, D/P, T/T | Supply Ability | 6K PCS | 
| Delivery Time | 2-3 DAYS | Packaging Details | 50 PCS/Tube | 
| Category | Single FETs, MOSFETs | Mfr | Infineon Technologies | 
| Series | Automotive, AEC-Q101, CoolMOS™ | Product Status | Active | 
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 650V | Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V | 
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA | Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V | 
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V | 
| Power Dissipation (Max) | 277.8W (Tc) | Operating Temperature | -40°C ~ 150°C (TJ) | 
| Mounting Type | Through Hole | Supplier Device Package | PG-TO220-3 | 
| Brand Name | Infineon Technologies | Model Number | IPP65R110CFDA | 
| Certification | RoHS | Place of Origin | United States | 
| High Light | IPP65R110CFDA ,high power n channel mosfet ,logic level n channel mosfet | ||
IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3
Features:IPP65R110CFDA
| Category | Single FETs, MOSFETs | 
| Mfr | Infineon Technologies | 
| Series | Automotive, AEC-Q101, CoolMOS | 
| Product Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 650 V | 
| Current - Continuous Drain (Id) @ 25ツーC | 31.2A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12.7A, 10V | 
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA | 
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 100 V | 
| Power Dissipation (Max) | 277.8W (Tc) | 
| Operating Temperature | -40°C~ 150°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | PG-TO220-3 | 
| Package / Case | TO-220-3 | 
| Base Product Number | IPP65R110 | 
Additional Resources
| ATTRIBUTE | DESCRIPTION | 
| Other Names | IPP65R110CFDAAKSA1-ND | 
| 448-IPP65R110CFDAAKSA1 | |
| SP000895234 | |
| Standard Package | 50 | 
Data Picture:https://www.infineon.com/dgdl/Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
  
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Company Details
Business Type:
Distributor/Wholesaler,Agent,Seller 
Year Established:
2012 
Total Annual:
1000000-5000000
Employee Number:
100~150 
Ecer Certification:
Active Member 
Terastor Electronics is a professional electronic components agent, distribution enterprise, with high quality electronic components and a variety of IC components, we have a mature business team, nearly ten years of industry experience, can handle a wide range of business, at the same... Terastor Electronics is a professional electronic components agent, distribution enterprise, with high quality electronic components and a variety of IC components, we have a mature business team, nearly ten years of industry experience, can handle a wide range of business, at the same...
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