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SHANGHAI FAMOUS TRADE CO.,LTD

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Silicon Carbide Wafer

Manufacturer of a wide range of products which include Ti/Cu Metal-Coated Silicon Wafer (Titanium/Copper),Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness,8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic C...

Quality Ti/Cu Metal-Coated Silicon Wafer (Titanium/Copper) for sale

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Ti/Cu Metal-Coated Silicon Wafer (Titanium/Copper)

  1. MOQ: 1

  2. Price: By case

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Payment Terms T/T
Supply Ability By case
Delivery Time 2-4 weeks
Packaging Details custom cartons
Wafer size 2", 4", 6", 8"; 10×10 mm pieces; any custom size available
Conductivity type P-type, N-type, Intrinsic high-resistivity (Un)
Crystal orientation <100>, <111>, etc.
Available metal films (series) Ti/Cu; also available: Au, Pt, Al, Ni, Ag, etc.
Substrate material Silicon (Si); optional: quartz, BF33 glass, etc.
Substrate thickness (µm) 2": 200 / 280 / 400 / 500 / as required; 4": 450 / 500 / 525 / as required; 6": 625 / 650 / 675 / as required; 8": 650 / 700 / 725 / 775 / as required
Brand Name ZMSH
Place of Origin China

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Quality Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness for sale

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Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness

  1. MOQ: 3pcs

  2. Price: By case

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Payment Terms T/T, Western Union
Supply Ability 500pcs
Delivery Time 2-4weeks
Packaging Details single wafer package in 1000-grade cleaning room
Material InP
growth method vFG
SIZE 2~ 4 INCH
Thickness 350-650um
application III-V direct bandgap semiconductor material
surface ssp/dsp
package single wafer box
Brand Name zmkj
Model Number InP
Place of Origin CHINA

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Quality 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor for sale

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8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

  1. MOQ: 1pcs

  2. Price: By case

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Payment Terms T/T, Western Union, MoneyGram
Supply Ability 1-50pcs/month
Delivery Time 1-6weeks
Packaging Details single wafer package in 100-grade cleaning room
Material SiC single crystal 4H-N type
Grade Dummy /Production grade
Thicnkss 0.35mm 0.5mm
Suraface double side polished
Application device maker polishing test
Diameter 200±0.5mm
Brand Name ZMKJ
Model Number 8inch sic wafers 4h-n
Place of Origin CHINA
Certification ROHS

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Quality Silicon Carbide (SiC) 10×10 mm Substrate / Small Square Chip – High-Performance SiC for sale

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Silicon Carbide (SiC) 10×10 mm Substrate / Small Square Chip – High-Performance SiC

  1. MOQ: 1

  2. Price: By case

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Payment Terms T/T
Supply Ability By case
Delivery Time 2-4 weeks
Packaging Details custom cartons
Material SiC
Dimensions 10mm × 10mm square
Thickness 330–500 μm (customizable)
Surface Finish Single/double-side polished, epi-ready
Brand Name ZMSH
Place of Origin China

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Quality High Purity Semi-Insulating HPSI SiC Powder/99.9999% Purity Crystal Growth for sale

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High Purity Semi-Insulating HPSI SiC Powder/99.9999% Purity Crystal Growth

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Payment Terms T/T
Purity ≥ 99.9999% (6N)
Particle Size 0.5 µm - 10 µm
Bandgap Width ~3.26 eV
Mohs Hardness 9.5
Brand Name ZMSH
Place of Origin China

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Quality 6H Silicon Carbide (SiC) Square Substrate Wafer for Power High-Frequency for sale

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6H Silicon Carbide (SiC) Square Substrate Wafer for Power High-Frequency

  1. MOQ: 2

  2. Price: By case

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Payment Terms T/T
Supply Ability By case
Delivery Time 2-4 weeks
Packaging Details custom cartons
Material 6H Silicon Carbide (6H-SiC)
Shape Square
Standard Sizes 5×5 mm, 10×10 mm, 20×20 mm (Custom Available)
Thickness 0.2 – 1.0 mm (Custom Available)
Surface Finish Single-side polished / Double-side polished / Unpolished
Surface Roughness Ra ≤ 0.5 nm (Polished)
Brand Name ZMSH
Place of Origin China

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Quality 4H-SiC Epitaxial Wafers for Ultra-High Voltage MOSFETs (100–500 μm, 6 inch) for sale

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4H-SiC Epitaxial Wafers for Ultra-High Voltage MOSFETs (100–500 μm, 6 inch)

  1. MOQ: 1

  2. Price: By case

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Payment Terms T/T
Supply Ability By case
Delivery Time 2-4 weeks
Packaging Details custom cartons
Conductivity Type N-type (doped with Nitrogen)
Resistivity ANY
Off-Axis Angle 4° ± 0.5° off (typically toward [11-20] direction)
Crystal Orientation (0001) Si-face
Thickness 200–300 µm
Surface Finish Front: CMP polished (epi-ready) Back: lapped or polished (fastest option)
Brand Name ZMSH
Place of Origin China

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Quality High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N for sale

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High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N

  1. MOQ: 5

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Delivery Time 2 weeks
Payment Terms 100%T/T
Supply Ability 100000
Material Silicon Carbide
Diameter 2inch 3inch 4inch 6inch 8inch
Grade Production/ Research/ Dummy
Thickness 350um 500um
Conductivity High/Low Conductivity
Orientation On-Axis/Off-Axis
Resistivity High/Low Resistivity
Bow/Warp ≤50um
Brand Name ZMSH
Model Number Silicon Carbide
Place of Origin China

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Quality High Resistivity Silicon Carbide Wafer  Semi Insulating For Low Particle Applications for sale

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High Resistivity Silicon Carbide Wafer Semi Insulating For Low Particle Applications

  1. MOQ: 5

  2. Price:

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Delivery Time 2 weeks
Payment Terms 100%T/T
Supply Ability 100000
Packaging Details single wafer container
Grade Production/ Research/ Dummy
Conductivity High/Low Conductivity
Resistivity High/Low Resistivity
Thickness 50-500um
Particle Free/Low Particle
TTV ≤2um
Surface Roughness ≤1.2nm
Orientation On-Axis/Off-Axis
Brand Name ZMSH
Model Number Silicon Carbide
Place of Origin China

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Quality 2inch 4inch 6inch 8inch Industrial Use Silicon Carbide Wafer With Surface Roughness ≤0.2nm for sale

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2inch 4inch 6inch 8inch Industrial Use Silicon Carbide Wafer With Surface Roughness ≤0.2nm

  1. MOQ: 5

  2. Price:

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Delivery Time 2-4 weeks
Payment Terms 100%T/T
Supply Ability 100000
Surface Finish Single/Double Side Polished
Surface Roughness ≤0.2nm
Conductivity High/Low Conductivity
Particle Free/Low Particle
Grade Production/ Research/ Dummy
Impurity Free/Low Impurity
Doped Silicon doped/Un-doped/Zn doped
Type 4H-N/ 6H-N/ 4H-Semi-insulting/ 6H-Semi-insulting
Brand Name ZMSH
Model Number Silicon Carbide
Place of Origin China
Certification ROHS

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.sapphire-substrate.com/

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