SHANGHAI FAMOUS TRADE CO.,LTD
Products
Manufacturer of a wide range of products which include Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness,Beta Coefficient-Ga2O3 Gallium Oxide Wafer Doped Mg Fe3+ Square Substrate Dsp,2Inch 4inch free-standing GaN Ga...
MOQ: 3pcs
Price: By case
| Payment Terms | T/T, Western Union |
| Supply Ability | 500pcs |
| Delivery Time | 2-4weeks |
| Packaging Details | single wafer package in 1000-grade cleaning room |
| Material | InP |
| growth method | vFG |
| SIZE | 2~ 4 INCH |
| Thickness | 350-650um |
| application | III-V direct bandgap semiconductor material |
| surface | ssp/dsp |
| package | single wafer box |
| Brand Name | zmkj |
| Model Number | InP |
| Place of Origin | CHINA |
MOQ: 5pcs
Price: By case
| Payment Terms | T/T, Western Union, paypal |
| Supply Ability | 50pcs/month |
| Delivery Time | in 30days |
| Packaging Details | single wafer container in cleaning room |
| layer | GaN template |
| layer thickness | 1-5um |
| Melt point (°C) | 1725°C |
| Conductivity | Semi-insulating, Fe-doped，Mg-doped |
| Electrical Resistivity | >1E6 Ohm-cm |
| Density | 5.95 g/cm3 |
| Brand Name | ZMKJ |
| Model Number | Beta Coefficient-Ga2O3 |
| Place of Origin | China |
MOQ: 5pcs
Price:
| Payment Terms | T/T |
| Supply Ability | 50pcs per month |
| Delivery Time | 1-5weeks |
| Packaging Details | single wafer case by vacuum package |
| Material | GaN on sapphire |
| size | 2 inch |
| thickness | 4mm on 0.43mm sapphire |
| type | N-type un-doped |
| Application | LED |
| Brand Name | zmkj |
| Model Number | 2inch Template |
| Place of Origin | CHINA |
MOQ: 2pcs
Price: By case
| Payment Terms | T/T, Western Union |
| Supply Ability | 50pcs per month |
| Delivery Time | 1-5weeks |
| Packaging Details | single wafer case by vacuum package |
| Material | GaN single crystal |
| size | 2inch |
| thickness | 4-5um on 0.43mm |
| type | template |
| Application | Laser Projection Display, Power Device |
| Growth | HVPE |
| Brand Name | zmkj |
| Model Number | 2-4inch template |
| Place of Origin | CHINA |
MOQ: 5pcs
Price: By case
| Payment Terms | T/T, Western Union |
| Supply Ability | 50pcs per month |
| Delivery Time | 1-5weeks |
| Packaging Details | single wafer case by vacuum package |
| Material | Aluminum Nitride Substrates |
| size | 2inch |
| thickness | 4-5um on 0.43mm |
| type | template |
| Application | Laser Projection Display, Power Device |
| Growth | HVPE |
| Brand Name | zmkj |
| Model Number | 2-4inch template |
| Place of Origin | CHINA |
MOQ: 10pcs
Price: 1200~2500usd/pc
| Payment Terms | T/T |
| Supply Ability | 50pcs per month |
| Delivery Time | 1-5weeks |
| Packaging Details | single wafer case by vacuum package |
| Material | GaN single crystal |
| size | 2inch |
| thickness | 0.35mm |
| type | N-type/semi-type |
| Application | Laser Projection Display, Power Device |
| Growth | HVPE |
| Brand Name | zmkj |
| Model Number | GaN-FS-C-U-C50-SSP 2inch |
| Place of Origin | CHINA |
MOQ:
Price:
| Payment Terms | T/T |
| Delivery Time | 2-4weeks |
| Polished | DSP SSP |
| Doping Concentration | Concentration Of The Doping Element 1×10^16 - 1×10^18 Cm^-3 |
| Defect Density | ≤500 Cm^-2 |
| Storage Conditions | Storage Environment For The Wafer Temperature 20-25°C, Humidity ≤60% |
| Mobility | 1200~2000 |
| Thickness | 350 + 10um |
| Flatness | Flatness Of The Wafer Surface ≤0.5 μm |
| Diameter | 2-8inch |
| Brand Name | ZMSH |
| Model Number | GaN-on-Si Wafer |
| Place of Origin | China |
MOQ:
Price:
| bottom | PSS Or Planar Sapphire |
| Growth Method | MOCVD |
| MQW | 0.5um MQWs |
| Diameter | 2inch 4inch |
| Polished | DSP SSP |
| Sapphire substrate orientation | CM0.2°±0.1° |
| Brand Name | ZMSH |
| Model Number | Blue GaN-based LED Wafer |
| Place of Origin | China |
MOQ:
Price:
| Payment Terms | T/T |
| Delivery Time | 2-4 weeks |
| Dimension | 1" diameter or 25.4 +/- 0.5 mm |
| Thickness | 350 +/- 50 um |
| Primary Flat | 12 +/- 1 mm |
| Secondary Flat: | 8 +/- 1 mm |
| Orientation | (0001) C-plane |
| Total Thickness Variation | ≤ 40 um |
| Bow | 0 +/- 10 um |
| Resistivity | ~ 10-3 ohm-cm |
| Carrier Concentration | ~ 1019 cm-3 |
| Carrier Mobility | ~ 150 cm2/V*s |
| Etch Pit Density | < 5 x 104 cm-2 |
| Polishing | Front surface: RMS < 0.5 nm, Epi ready, Back surface ground. |
| Brand Name | ZMSH |
| Model Number | GaN Gallium Nitride Wafer |
| Place of Origin | China |
MOQ: 1
Price:
| Payment Terms | T/T |
| Delivery Time | 2-4 weeks |
| EPD | 5500cm2 |
| Polished | DSP SSP |
| Mobility | 1200~2000 |
| Conductivity Type | N-type Or P-type |
| Etch Pit Density | ≤1E2/cm2 |
| Packaging | Packaging Method Of The Wafer Vacuum Packaging, Nitrogen Backfilled |
| Doping Concentration | Concentration Of The Doping Element 1×10^16 - 1×10^18 Cm^-3 |
| Doping Element | Element Used For Doping Antimony (Sb), Indium (In), Phosphorus (P), Etc. |
| Brand Name | ZMSH |
| Model Number | InP |
| Place of Origin | China |
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