SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T, Western Union, MoneyGram |
| Supply Ability | 1-500pcs/month |
| Delivery Time | 1-6weeks |
| Packaging Details | single wafer package in 100-grade cleaning room |
| Material | SiC single crystal 4H-N 4H-Si |
| Grade | Production Dummy and Zero MPD |
| Thicnkss | 0.35mm and 0.5mm |
| LTV/TTV/Bow Warp | ≤5 um/≤15 u/$40 um/≤60 um |
| Application | For MOS and Semiconductor |
| Diameter | 6inch 150mm |
| Color | Green Tea |
| MPD | <2cm-2 for Zero MPD production grade |
| Brand Name | ZMKJ |
| Model Number | 6inch 150mm SiC Substrate |
| Certification | ROHS |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T, Western Union, MoneyGram | Supply Ability | 1-500pcs/month |
| Delivery Time | 1-6weeks | Packaging Details | single wafer package in 100-grade cleaning room |
| Material | SiC single crystal 4H-N 4H-Si | Grade | Production Dummy and Zero MPD |
| Thicnkss | 0.35mm and 0.5mm | LTV/TTV/Bow Warp | ≤5 um/≤15 u/$40 um/≤60 um |
| Application | For MOS and Semiconductor | Diameter | 6inch 150mm |
| Color | Green Tea | MPD | <2cm-2 for Zero MPD production grade |
| Brand Name | ZMKJ | Model Number | 6inch 150mm SiC Substrate |
| Certification | ROHS | Place of Origin | CHINA |
| High Light | 150mm SIC Wafer ，4H-N Type SiC Substrate ，Zero Grade Silicon Carbide Wafer | ||
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About Silicon Carbide (SiC)Crystal
Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC substrates are produced from crystal ingots of the highest quality using proprietary state-of-the-art physical vapor transport (PVT) growth techniques and computer-aided manufacturing (CAM). Advanced wafer manufacturing techniques are used to convert ingots into wafers to ensure the consistent, reliable quality you need.
With the 6inch 150 mm SiC wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 6inch 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.
| 6inch 200mm N-Type SiC Substrates Specifications | ||||
| Property | P-MOS Grade | P-SBD Grade | D Grade | |
| Crystal Specifications | ||||
| Crystal Form | 4H | |||
| Polytype Area | None Permitted | Area≤5% | ||
| (MPD) a | ≤0.2 /cm2 | ≤0.5 /cm2 | ≤5 /cm2 | |
| Hex Plates | None Permitted | Area≤5% | ||
| Hexagonal Polycrystal | None Permitted | |||
| Inclusions a | Area≤0.05% | Area≤0.05% | N/A | |
| Resistivity | 0.015Ω•cm—0.025Ω•cm | 0.015Ω•cm—0.025Ω•cm | 0.014Ω•cm—0.028Ω•cm | |
| (EPD)a | ≤4000/cm2 | ≤8000/cm2 | N/A | |
| (TED)a | ≤3000/cm2 | ≤6000/cm2 | N/A | |
| (BPD)a | ≤1000/cm2 | ≤2000/cm2 | N/A | |
| (TSD)a | ≤600/cm2 | ≤1000/cm2 | N/A | |
| (Stacking Fault) | ≤0.5% Area | ≤1% Area | N/A | |
| Surface Metal Contamination | (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2 | |||
| Mechanical Specifications | ||||
| Diameter | 150.0 mm +0mm/-0.2mm | |||
| Surface Orientation | Off-Axis:4°toward <11-20>±0.5° | |||
| Primary Flat Length | 47.5 mm ± 1.5 mm | |||
| Secondary Flat Length | No Secondary Flat | |||
| Primary Flat Orientation | <11-20>±1° | |||
| Secondary Flat Orientation | N/A | |||
| Orthogonal Misorientation | ±5.0° | |||
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP | |||
| Wafer Edge | Beveling | |||
| Surface Roughness (10μm×10μm) | Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm | |||
| Thickness a | 350.0μm± 25.0 μm | |||
| LTV(10mm×10mm)a | ≤2μm | ≤3μm | ||
| (TTV)a | ≤6μm | ≤10μm | ||
| (BOW) a | ≤15μm | ≤25μm | ≤40μm | |
| (Warp) a | ≤25μm | ≤40μm | ≤60μm | |
| Surface Specifications | ||||
| Chips/Indents | None Permitted ≥0.5mm Width and Depth | Qty.2 ≤1.0 mm Width and Depth | ||
| Scratches a (Si Face,CS8520) | ≤5 and Cumulative Length≤0.5×Wafer Diameter | ≤5 and Cumulative Length≤1.5× Wafer Diameter | ||
| TUA(2mm*2mm) | ≥98% | ≥95% | N/A | |
| Cracks | None Permitted | |||
| Contamination | None Permitted | |||
| Edge Exclusion | 3mm | |||
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
>Packaging – Logistics
Concerns about each detail of the package, cleaning, anti-static, and shock treatment.
According to the quantity and shape of the product, we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassettes in the 100-grade cleaning room.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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