SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Supply Ability | By case |
| Delivery Time | 2-4 weeks |
| Packaging Details | custom cartons |
| Polytype | 4H |
| Doping Type | N-type |
| Diameter | 300 ± 0.5 mm |
| Thickness | Green: 600 ± 100 µm / White-transparent: 700 ± 100 µm |
| Surface Orientation (Off-cut) | 4° toward \<11-20\> ± 0.5° |
| TTV (Total Thickness Variation) | ≤ 10 µm |
| Brand Name | ZMSH |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | By case |
| Delivery Time | 2-4 weeks | Packaging Details | custom cartons |
| Polytype | 4H | Doping Type | N-type |
| Diameter | 300 ± 0.5 mm | Thickness | Green: 600 ± 100 µm / White-transparent: 700 ± 100 µm |
| Surface Orientation (Off-cut) | 4° toward \<11-20\> ± 0.5° | TTV (Total Thickness Variation) | ≤ 10 µm |
| Brand Name | ZMSH | Place of Origin | China |
| High Light | 12-inch silicon carbide wafer ，300mm SiC semiconductor wafer ，silicon carbide wafer with warranty | ||
The 12-inch Silicon Carbide (SiC) wafer represents the next generation of wide bandgap semiconductor substrates, designed to support the large-scale production of high-performance power electronic devices. Compared with conventional 6-inch and 8-inch SiC wafers, the 12-inch format significantly increases usable chip area per wafer, improves manufacturing efficiency, and offers strong potential for long-term cost reduction.
Silicon carbide is a wide bandgap semiconductor material featuring high breakdown electric field strength, excellent thermal conductivity, high saturated electron drift velocity, and outstanding thermal stability. These properties make 12-inch SiC wafers an ideal platform for high-voltage, high-power, and high-temperature applications.
Material: Single-crystal Silicon Carbide (SiC)
Polytype: 4H-SiC (standard for power devices)
Conductivity Type:
N-type (Nitrogen doped)
Semi-insulating (customizable)
The growth of 12-inch SiC single crystals requires advanced control of temperature gradients, stress distribution, and impurity incorporation. Improved PVT (Physical Vapor Transport) crystal growth technology is typically employed to achieve large-diameter, low-defect SiC boules.
The production of 12-inch SiC wafers involves a series of high-precision processes:
Large-diameter single-crystal growth
Crystal orientation and ingot slicing
Precision grinding and wafer thinning
Single-side or double-side polishing
Advanced cleaning and comprehensive inspection
Each step is tightly controlled to ensure excellent flatness, thickness uniformity, and surface quality.
Higher Device Yield per Wafer: Larger wafer size enables more chips per run
Improved Manufacturing Efficiency: Optimized for next-generation fabs
Cost Reduction Potential: Lower cost per device in high-volume production
Superior Thermal and Electrical Performance: Ideal for harsh operating conditions
Strong Process Compatibility: Suitable for mainstream SiC power device fabrication
Electric vehicles (SiC MOSFETs, SiC Schottky diodes)
On-board chargers (OBC) and traction inverters
Fast-charging infrastructure and power modules
Solar inverters and energy storage systems
Industrial motor drives and railway systems
High-end power electronics and defense applications
| Item | N-type Production Grade (P) | N-type Dummy Grade (D) | SI-type Production Grade (P) |
|---|---|---|---|
| Polytype | 4H | 4H | 4H |
| Doping Type | N-type | N-type | / |
| Diameter | 300 ± 0.5 mm | 300 ± 0.5 mm | 300 ± 0.5 mm |
| Thickness | Green: 600 ± 100 µm / White-transparent: 700 ± 100 µm | Green: 600 ± 100 µm / White-transparent: 700 ± 100 µm | Green: 600 ± 100 µm / White-transparent: 700 ± 100 µm |
| Surface Orientation (Off-cut) | 4° toward <11-20> ± 0.5° |
4° toward <11-20> ± 0.5° |
4° toward <11-20> ± 0.5° |
| Wafer ID / Primary Flat | Notch (full-round wafer) | Notch (full-round wafer) | Notch (full-round wafer) |
| Notch Depth | 1.0 – 1.5 mm | 1.0 – 1.5 mm | 1.0 – 1.5 mm |
| TTV (Total Thickness Variation) | ≤ 10 µm | NA | ≤ 10 µm |
| MPD (Micropipe Density) | ≤ 5 ea/cm² | NA | ≤ 5 ea/cm² |
| Resistivity | Measurement zone: Center 8-inch Area | Measurement zone: Center 8-inch Area | Measurement zone: Center 8-inch Area |
| Si-face Surface Treatment | CMP (Polished) | Grinding | CMP (Polished) |
| Edge Processing | Chamfer | No Chamfer | Chamfer |
| Edge Chips (Allowable) | Chip depth < 0.5 mm | Chip depth < 1.0 mm | Chip depth < 0.5 mm |
| Laser Marking | C-side marking / According to customer requirements | C-side marking / According to customer requirements | C-side marking / According to customer requirements |
| Polytype Area (Polarized Light) | No polytype (edge exclusion 3 mm) | Polymorphism area < 5% (edge exclusion 3 mm) | No polytype (edge exclusion 3 mm) |
| Cracks (High-intensity Light) | No cracks (edge exclusion 3 mm) | No cracks (edge exclusion 3 mm) | No cracks (edge exclusion 3 mm) |
Q1: Are 12-inch SiC wafers ready for mass production?
A: 12-inch SiC wafers are currently in the early stage of industrialization and are being actively evaluated for pilot and volume production by leading manufacturers worldwide.
Q2: What are the advantages of 12-inch SiC wafers compared to 8-inch wafers?
A: The 12-inch format significantly increases chip output per wafer, improves fab throughput, and offers long-term cost advantages.
Q3: Can wafer specifications be customized?
A: Yes, parameters such as conductivity type, thickness, polishing method, and inspection grade can be customized.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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