2 Inch / 4 Inch / 6 Inch P-Type Silicon Wafer with Polished Surface

Product Specification

2 Inch / 4 Inch / 6 Inch P-Type Silicon Wafer with Polished Surface

Description of P Type Silicon Wafer:

    P type silicon wafer are semiconductors that have been doped with elements such as boron,which create "holes"in the silicon lattice. These holes act as positive charge carriers, allowing for the conduction of electricity. 2inch 4inch and 6inch diameter wafers are common sizes used in the semiconductor industry, balancing efficiency and compatibility with various fabrication processes. These 2" (50.8mm), 4" (102mm), and 6" (152.5mm) diameter silicon wafers can be used either as substrates for thin film research or to make small silicon substrates by dicing the wafer into smaller pieces using a scriber. Wafers generally have flats or notches cut into one or more sides indicating the crystallographic plane and doping type. These silicon wafers are available as P-type (boron-doped) wafers which are cut with a primary flat. The wafers are 230 - 575µm thick, polished on one side, and do not have a silicon dioxide top coating. Each wafer is shipped in a wafer carrier.

How P Type Silicon Wafers are Made?

    Producing monocrystalline silicon is an intricate process requiring high temperatures and systematic seeding and filtering procedures. But what really makes a silicon wafer P type is the precision doping techniques.

There are a few common ways to dope silicon with group III acceptor atoms:

Doping during crystal growth: Adding boron or gallium impurities to the molten silicon as it is crystallizing into an ingot

Thermal diffusion: Exposing the wafer surface to boron nitride or boron tribromide at over 1000°C to infuse atoms

Ion implantation: Firing a beam of boron ions directly into the silicon lattice

Ion implantation tends to be the favored approach in advanced semiconductor fabs. It offers precise control over the dopingconcentration across very thin layers within the silicon crystal. Proper calibration is critical to optimize the positive charge carrier mobility.

Specifications of P Type Silicon Wafer:

Material: Single Crystal Silicon Wafer

Growth Method: CZ

Orientation: <100> +/- 1 deg

Diameter: 2inch, 4inch, 6inch

Thickness: Ø2" = 9 - 13 mill (230 - 330µm)

          Ø4" = 18.7 - 22.6 mill (475 - 575µm)

Ø6" = 23.6 - 25.2 mill (600 - 690µm)

Roughness: 2nm

Type/ Dopant: P/ Boron

Electrical Resistivity: 1-30Ω

Surface Finish: Double Side Polished (DSP) or Single Side Polished(SSP)

TTV: < 30 µm

Applications of P Type Silicon Wafer:

    P-type silicon wafers are boron-doped monocrystalline or polycrystalline silicon substrates widely used in the semiconductor, solar, and microelectronics industries.
They serve as the foundation for devices that rely on hole (positive charge carrier) conduction rather than electrons, making them critical for a variety of power and logic applications. P-type silicon wafers are essential materials for semiconductors, power devices, MEMS sensors, and solar cells. Their reliable electrical performance, stable hole conduction, and compatibility with CMOS processing make them a cornerstone of modern electronics and renewable energy technologies.

What kind of Silicon Wafer ZMSH can Provide?

    ZMSH offers P Type and N Type Si wafers with diameters of 2, 3, 4, 6,8 and 12 inches . In addition to round wafers, wafers separated into rectangular pieces are also possible. ZMSH is committed to becoming a global leader in single-crystal silicon substrate solutions. By continuously innovating in material purity and processing technology, the company drives the semiconductor industry toward smaller process nodes and higher performance. In the future, ZMSH will continue to focus on the research, development, and mass production of large-size (12-inch and above), ultra-low-defect single-crystal silicon substrates, while exploring silicon-based heterogeneous integration technologies (such as Si/SiC and Si/GaN). This will support breakthroughs in third-generation semiconductors and advanced packaging technologies, providing critical material support for cutting-edge fields including 5G, artificial intelligence, and autonomous driving.

Q&A:

Q: Why is p-type substrate preferred?

A: P-type substrates help mitigate latch-up in several ways: - Effective Guard Ring Implementation: Grounded p-type guard rings quickly shunt injected current away from sensitive regions. - Deep N-Well Isolation: Deep n-wells enclosing the n-wells used for PMOS devices further isolate parasitic structures.

Q: What is a p-type silicon wafer?

A: P-type silicon is a semiconductor that silicon wafer manufacturers dope to achieve the desired electrical properties. This allows us to optimize the materials for specific applications. Elements such as boron, gallium, and aluminum create positively charged "holes" as the primary charge carriers.

Q: What is the difference between N type and p-type silicon wafers?

A: N type wafers tend to have higher resistivity than comparable P type. They also often are produced with slightly lower oxygen levels and metallic impurities. However, both P and N wafers for semiconductor device fabrication require tight control and metrology to verify all parameters are in spec.