4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

Product Specification

4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers MPD or Dummy Grade

Introduction of 3C SiC Wafer:

Compared to 4H-Sic, although the bandgap of cubic silicon carbide (3c Sic, belong to beta Sic) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-Sic, Moreover, the defect density at the interface between the insulating oxide gate and 3c-sic is lower, which is more conducive to manufacturing high-voltage, highly reliable, and long-life devices. At present, 3c-sic based devices are mainly prepared on Si substrates, The large lattice mismatch and thermal expansion coefficient mismatch between Si and 3c Sic result in a high defect density which affects the performance of devices, Moreover. ow-cost 3C-Sic wafer will have a significant substitution impact on the power device market in the 600V-1200V voltage range, accelerating the entire industry's progress. Therefore, developing bulk 3C-SiC wafer is inevitable.

The Advantages of 3C-N SiC Wafer:

3C-N SiC wafers combine the high mobility and low cost of cubic SiC with the thermal and electrical robustness of SiC materials.They deliver faster switching, lower losses, and better manufacturability, making them a cost-effective and high-performance substrate for next-generation electronic and energy systems.

Excellent Electrical Properties:

Moderate Bandgap (~2.36 eV): Wider than silicon, enabling high breakdown voltage and low leakage current. High Electron Mobility: The cubic (3C) structure allows higher carrier mobility than 4H-SiC or 6H-SiC, resulting in faster device switching speeds and lower conduction losses. N-type Conductivity: Controlled nitrogen doping ensures stable conductivity and uniform electrical characteristics.

Superior Thermal and Mechanical Performance:

High Thermal Conductivity (~3.2 W/cm·K): Efficiently dissipates heat, ensuring reliable operation in high-power environments. Excellent Thermal Stability: Maintains performance at elevated temperatures (>350 °C). High Hardness and Chemical Stability: Resistant to wear, corrosion, and radiation, making it suitable for harsh or extreme environments.

Specifications of ZMSH 3C-N SiC Wafer:

Differences of 4H-Sic,6H-Sic, 3c-Sic in Applications:

4H-SiC has high electron mobility, low conduction resistance, and high curent density, making it suitable for power electronic devices

6H-SiC has a stable structure and good luminescence performance, making it suitable for optoelectronic devices

3C-Sic has a hioh saturation electron dit velociy and a thermal conducivily second only to diamond single crvstals, making it suitable for hiohfrequency and high-power devices.

Q&A:

Q: What is a SiC wafer?

A: A SiC wafer — short for Silicon Carbide wafer — is a single-crystal substrate made from silicon (Si) and carbon (C) atoms. It is one of the most important wide-bandgap semiconductor materials used in next-generation power electronics, RF devices, and high-temperature applications. A SiC wafer is a high-performance semiconductor substrate known for its wide bandgap, superior heat conductivity, and high voltage endurance. It enables smaller, faster, and more energy-efficient electronic devices — powering the future of electric vehicles, renewable energy systems, and advanced communication technologies.

Q: What is the full form of 3C-SiC?

A: 3C-SiC (Cubic Silicon Carbide) is a cubic crystal form of silicon carbide characterized by high electron mobility, excellent thermal stability, and compatibility with silicon substrates. It is widely used for high-speed, low-power, and cost-effective semiconductor devices.

Q: Which is better, SiC or GaN?

A: SiC (Silicon Carbide) is best for high-power, high-voltage, high-temperature applications such as electric vehicles, rail transit, and renewable energy.GaN (Gallium Nitride) excels in high-frequency, low-to-medium voltage applications like fast chargers, RF amplifiers, and 5G systems.