4inch 4H/6H-P Type Silicon Carbide Wafer 350um Thickness SiC Substrate

Product Specification

4inch 4H/6H P Type Silicon Carbide Wafer 350um Thickness SiC Substrate   

What is P-type SiC wafer?

A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

In the context of SiC wafers, "P-type" refers to the type of doping used to modify the conductivity of the material. Doping involves intentionally introducing impurities into the crystal structure of the semiconductor to alter its electrical properties. In the case of P-type doping, elements with fewer valence electrons than silicon (the base material for SiC) are introduced, such as aluminum or boron. These impurities create "holes" in the crystal lattice, which can act as charge carriers, resulting in a P-type conductivity.

P-type SiC wafers are essential for fabricating various electronic components, including power devices like metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, and bipolar junction transistors (BJTs). They are typically grown using advanced epitaxial growth techniques and are further processed to create specific device structures and features required for different applications.

Key advantages of P-type SiC wafers:     

High-temperature performance: P-type SiC can operate reliably at temperatures up to 350 and beyond, unlike conventional silicon, making it suitable for demanding applications. 

Excellent thermal and electrical conductivity: SiC's superior thermal conductivity allows for better heat dissipation, while its electrical properties lead to more efficient conduction and lower power loss. 

High power handling: SiC wafers are used to manufacture high-voltage power devices such as MOSFETs and BJTs, enabling them to handle higher voltages more efficiently. 

Fast switching speeds: The material's properties enable faster switching speeds in power electronic devices, which increases efficiency and allows for device miniaturization. 

Durability: The robust crystalline structure of SiC resists degradation, ensuring device longevity and reliability even in harsh operating conditions, including high radiation and corrosive environments. 

Improved reliability: The unique SiC lattice structure reduces defect formation and supports higher-frequency operations with lower electronic noise, leading to more reliable electronic systems. 

Specification of 4 inch diameter 4H/6H-P Silicon Carbide (SiC) Wafer:

Specification of 4 inch diameter 4H/6H-P Type Silicon Carbide (SiC) Substrate
Grade	Zero MPD Production Grade (Z Grade)	Standard Production Grade (P Grade)		Dummy Grade (D Grade)
Diameter	99.5 mm~100.0 mm
Thickness	350 μm ± 25 μm
Wafer Orientation	Off axis: 2.0°-4.0°toward {11-20} ± 0.5° for 4H/6H-P
Micropipe Density	0 cm-2
Resistivity	≤0.1 Ω.cm			≤0.3 Ω.cm
Primary Flat Orientation	{10-10} ±5.0°
Primary Flat Length	32.5 mm ± 2.0 mm
Secondary Flat Length	18.0 mm ± 2.0 mm
Secondary Flat Orientation	Silicon face up: 90° CW. from Prime flat ± 5.0°
Edge Exclusion	3 mm			6 mm
LTV/TTV/Bow /Warp	≤2.5 μm/≤5 μm/≤ 15 μm/≤30 μm			≤ 10 μm/≤ 15 μm/≤25 μm/≤40 μm
Roughness	Polish: Ra≤1 nm
	CMP:                      Ra≤0.2 nm			Ra≤0.5 nm
Edge Cracks By High Intensity Light	None			Cumulative length ≤ 10 mm, single length≤2 mm
Hex Plates By High Intensity Light	Cumulative area ≤0.05%			Cumulative area ≤0.1%
Polytype Areas By High Intensity Light	None			Cumulative area≤3%
Visual Carbon Inclusions	Cumulative area ≤0.05%			Cumulative area ≤3%
Silicon Surface Scratches By High Intensity Light	None			Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light	None permitted ≥0.2mm width and depth			5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity	None
Package	Multi-wafer Cassette or Single Wafer Container

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     ZMKJ provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-12 inch , both 4H and 6H SiC , N-type , Nitrogen doped , P-Type, semi-insulating type and 3C-N type available .

Q&A:

Q: What is p-type silicon carbide wafer?

A: A P-type Silicon Carbide (SiC) wafer is a semiconducting substrate that has been doped with acceptor impurities (usually aluminum or boron) to create an abundance of holes (positive charge carriers). It is one of the two main conductive types of SiC wafers — the other being N-type — and is essential for building p–n junctions in high-power and high-frequency devices.

Q: What is the difference between P type and N type silicon wafers?

A: N-type wafers conduct via electrons — faster, more efficient for high-speed devices.

Q-type wafers conduct via holes — useful for complementary circuits and junction formation. Together, they form the foundation of nearly all modern semiconductor devices.

Q: Is silicon carbide N type or p-type?

A: Silicon carbide (SiC) can be either N-type or P-type, depending on how it is doped during crystal growth. Silicon carbide can be either N-type or P-type, depending on the dopant used. However, N-type SiC is more commonly used as the substrate material in modern power and high-frequency semiconductor devices because of its higher electron mobility and conductivity.