4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

Product Specification

4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

What are Silicon Carbide (SiC) Wafers & Substrates?

    Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust foundation for fabricating high-power, high-frequency electronic devices, such as power electronics and radio frequency components. Silicon carbide wafers’ unique properties make them ideal for applications requiring high-temperature operation, harsh environments, and improved energy efficiency.  

Introduction to 4H-N SiC Wafers:

    4H-N Silicon Carbide (SiC) wafers are n-type single-crystal substrates made from 4H-polytype silicon carbide, a member of the third generation of wide-bandgap semiconductor materials. They combine high voltage tolerance, superior thermal conductivity, and excellent electron mobility, making them the preferred material for next-generation high-power, high-frequency, and high-temperature electronic devices.

Specification of ZMSH 4inch 4H-N Sic Substrates:

Key Advantages of Sic Wafers and Substrates:

Wide Bandgap: Enables high-voltage operation (>1200 V) with low power loss.

High Thermal Conductivity: Excellent heat dissipation for high-power devices.

High Breakdown Field Strength: Supports compact device design with higher performance.

High Electron Mobility: Allows fast switching speeds and low on-resistance.

Radiation Resistance: Ideal for aerospace and defense electronics.

Thermal and Chemical Stability: Performs reliably under extreme temperature and environment.

Applications of 4H-N Type Sic Wafers:

    4H-N SiC wafers are used in high-performance electronic applications due to their excellent thermal, electrical, and mechanical properties, especially in high-voltage, high-temperature, and high-frequency environments. Key applications include power devices (like MOSFETs and diodes), electric vehicle components, renewable energy systems (such as solar inverters), and RF devices for communication and radar systems. They are also used in aerospace, high-temperature sensors, and some optoelectronic devices.

ZMSH Related SiC Wafer Recommendation:

6-Inch Silicon Carbide (SiC) Wafer for AR glasses MOS SBD

Q&A:

Q:What is the difference between SI wafer and SiC wafer? 

A: Silicon wafers are ideal for general-purpose electronics — affordable and reliable for low-to-medium power devices. SiC wafers, as wide-bandgap semiconductors, excel in high-power, high-voltage, and high-temperature environments, enabling faster, smaller, and more efficient power electronics.

Q: Which is better, SiC or GaN?

A: SiC (Silicon Carbide) is best for high-power, high-voltage, high-temperature applications such as electric vehicles, rail transit, and renewable energy.GaN (Gallium Nitride) excels in high-frequency, low-to-medium voltage applications like fast chargers, RF amplifiers, and 5G systems.

Q: What is a SiC wafer?

A: A SiC wafer — short for Silicon Carbide wafer — is a single-crystal substrate made from silicon (Si) and carbon (C) atoms. It is one of the most important wide-bandgap semiconductor materials used in next-generation power electronics, RF devices, and high-temperature applications. A SiC wafer is a high-performance semiconductor substrate known for its wide bandgap, superior heat conductivity, and high voltage endurance. It enables smaller, faster, and more energy-efficient electronic devices — powering the future of electric vehicles, renewable energy systems, and advanced communication technologies.