N-type Conductive SiC Substrate Composite Substrate 6inch For Epitaxy MBE CVD

Product Specification

N-type conductive SiC substrate composite substrate 6inch for Epitaxy MBE CVD LPE

N-type conductive SiC substrate abstract

This N-type conductive SiC substrate features a 150mm diameter with a precision of ±0.2mm and utilizes the 4H polytype for superior electrical properties. The substrate exhibits a resistivity range of 0.015 to 0.025 ohm·cm, ensuring efficient conductivity. It includes a robust transfer layer thickness of at least 0.4μm, enhancing its structural integrity. The quality control limits voids to ≤ 5 per wafer, with each void measuring between 0.5mm and 2mm in diameter. These characteristics make the SiC substrate ideal for high-performance applications in power electronics and semiconductor devices, providing reliability and efficiency.

Specifications and Schematic Diagram for N-type Conductive SiC Substrate

N-type conductive SiC substrate properties

N-type conductive Silicon Carbide (SiC) substrates are widely used in various electronic and optoelectronic applications due to their unique properties. Here are some key properties of N-type conductive SiC substrates:

1. Electrical Properties:

   • High Electron Mobility: SiC has a high electron mobility, which allows for efficient current flow and high-speed electronic devices.
   • Low Intrinsic Carrier Concentration: SiC maintains a low intrinsic carrier concentration even at high temperatures, making it suitable for high-temperature applications.
   • High Breakdown Voltage: SiC can withstand high electric fields without breaking down, allowing for the fabrication of high-voltage devices.

2. Thermal Properties:

   • High Thermal Conductivity: SiC has excellent thermal conductivity, which helps in dissipating heat efficiently from high-power devices.
   • Thermal Stability: SiC remains stable at high temperatures, maintaining its structural integrity and electronic properties.

3. Mechanical Properties:

   • Hardness: SiC is a very hard material, providing durability and resistance to mechanical wear.
   • Chemical Inertness: SiC is chemically inert and resistant to most acids and bases, which is beneficial for harsh operating environments.

4. Doping Characteristics:

   • Controlled N-type Doping: N-type SiC is typically doped with nitrogen to introduce excess electrons as charge carriers. The doping concentration can be precisely controlled to tailor the substrate's electrical properties.

N-type conductive SiC substrate‘s photo

Q&A

Q:What is SiC epitaxy?

A: SiC epitaxy is the process of growing a thin, crystalline layer of silicon carbide (SiC) on a SiC substrate. This is typically done using Chemical Vapor Deposition (CVD), where gaseous precursors decompose at high temperatures to form the SiC layer. The epitaxial layer matches the crystal orientation of the substrate and can be precisely doped and controlled in thickness to achieve desired electrical properties. This process is essential for fabricating high-performance SiC devices used in power electronics, optoelectronics, and high-frequency applications, offering advantages such as high efficiency, thermal stability, and reliability.