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SiC wafer 12inch 300mm thickness 750±25um Prime Dummy Reaserch Grade for Semiconductor
12 inch SiC wafer‘s abstract
A 12-inch (300mm) Silicon Carbide (SiC) wafer, with a thickness of 750±25 microns, is a critical material in the semiconductor industry due to its exceptional thermal conductivity, high breakdown voltage, and superior mechanical properties. These wafers are manufactured with advanced techniques to meet the stringent requirements of high-performance semiconductor applications. SiC's inherent properties make it ideal for power devices and high-temperature electronics, offering higher efficiency and durability compared to traditional silicon-based semiconductors.
12 inch SiC wafer‘s data sheet
1 2 inch Silicon Carbide (SiC) Substrate Specification
Grade
ZeroMPD Production Grade(Z Grade)
Standard Production Grade(P Grade)
Dummy Grade (D Grade)
Diameter
3 0 0 mm~1305mm
Thickness
4H-N
750μm±15 μm
750μm±25 μm
4H-SI
750μm±15 μm
750μm±25 μm
Wafer Orientation
Off axis : 4.0° toward <1120 >±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI
Micropipe Density
4H-N
≤0.4cm-2
≤4cm-2
≤25cm-2
4H-SI
≤5cm-2
≤10cm-2
≤25cm-2
Resistivity
4H-N
0.015~0.024 Ω·cm
0.015~0.028 Ω·cm
4H-SI
≥1E10 Ω·cm
≥1E5 Ω·cm
Primary Flat Orientation
{10-10} ±5.0°
Primary Flat Length
4H-N
N/A
4H-SI
Notch
Edge Exclusion
3 mm
LTV/TTV/Bow /Warp
≤5μm/≤15μm/≤35 μm/≤55 μm
≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
1 Roughness
Polish Ra≤1 nm
CMP Ra≤0.2 nm
Ra≤0.5 nm
Edge Cracks By High Intensity Light 1 Hex Plates By High Intensity Light 1 Polytype Areas By High Intensity Light Visual Carbon Inclusions Silicon Surface Scratches By High Intensity Light
None Cumulative area ≤0.05% None Cumulative area ≤0.05% None
Cumulative length ≤ 20 mm, single length≤2 mm Cumulative area ≤0.1% Cumulative area≤3% Cumulative area ≤3% Cumulative length≤1×wafer diameter
Edge Chips By High Intensity Light
None permitted ≥0.2mm width and depth
7 allowed, ≤1 mm each
Threading screw dislocation
≤500 cm-2
N/A
Base plane dislocation
≤1000 cm-2
N/A
Silicon Surface Contamination By High Intensity Light
None
Packaging
Multi-wafer Cassette Or Single Wafer Container
12 inch SiC wafer‘s photo
12 inch SiC wafer‘s properties
1. Advantages of 12-inch (large size) wafer:
12inch SiC waferIncreased production efficiency: As the wafer size increases, the number of chips per unit area increases significantly, greatly enhancing manufacturing efficiency. Compared to smaller wafers, a 12-inch wafer can produce more devices in the same amount of time, shortening the production cycle.
12inch SiC wafer Reduced production costs: Since a single 12-inch SiC wafer can produce more chips, the manufacturing cost per chip is greatly reduced. Larger wafers improve the efficiency of processes such as photolithography and thin-film deposition, thus lowering the overall production cost.
Higher yield: While SiC material inherently has a higher defect rate, larger wafers offer more tolerance for defects in the production process, which helps improve the yield.
2. Suitability for high-power applications:
12inch SiC wafer SiC material itself has excellent properties for high temperature, high frequency, high power, and high voltage performance, making it ideal for power electronics, automotive electronics, and 5G base stations, among other high-power applications. A 12-inch SiC wafer better meets the demands for device performance and reliability in these fields.
12inch SiC wafer Electric vehicles (EV) and charging stations: SiC devices, especially those made from 12-inch wafers, have become a key technology in electric vehicle (EV) battery management systems (BMS), DC fast charging, and power conversion systems. The larger wafer size can meet the higher power requirements, providing greater efficiency and lower energy consumption.
3. Alignment with industry development trends:
12inch SiC wafer Advanced processes and higher integration: As semiconductor technology progresses, there is increasing demand for power devices with higher integration and performance, particularly in fields such as automotive, renewable energy (solar, wind), and smart grids. The 12-inch SiC wafer not only offers higher power density and reliability but also meets the increasingly complex device design and smaller size requirements.
Global market demand growth: There is a growing global demand for green energy, sustainable development, and efficient power transmission, which continues to drive the market for SiC power devices. The rapid development of electric vehicles (EVs) and efficient power equipment has expanded the application of 12-inch SiC wafers.
4. Material advantages:
12inch SiC wafer SiC material has excellent thermal conductivity, high-temperature resistance, and radiation tolerance. The 12-inch SiC wafer can maintain high performance at higher operating temperatures, making it particularly suitable for high-voltage, high-power applications.
The 12-inch SiC wafer can also operate over a wider temperature range, which is critical for the stability and durability of power electronic devices.
Q&A
Q: What are the advantages of using 12-inch SiC wafers in semiconductor manufacturing?
A:The main advantages of using 12-inch SiC wafers include:
Increased Production Efficiency: Larger wafers allow more chips to be produced per unit area, reducing the manufacturing cycle time. This results in higher throughput and better overall efficiency compared to smaller wafers.
Reduced Production Costs: A single 12-inch wafer produces more chips, which lowers the cost per chip. Larger wafers also enhance the efficiency of processes such as photolithography and thin-film deposition.
Higher Yield: Although SiC material tends to have a higher defect rate, larger wafers allow more tolerance for defects, which ultimately helps improve the yield.
Q: What are the key applications for 12-inch SiC wafers in high-power systems?
A:12-inch SiC wafers are particularly suitable for high-power applications such as:
Electric Vehicles (EVs) and Charging Stations: SiC devices made from 12-inch wafers are crucial for power conversion systems, battery management systems (BMS), and DC fast charging in electric vehicles. The larger wafer size supports higher power demands, improving efficiency and reducing energy consumption.
High-Voltage and High-Power Electronics: SiC’s excellent thermal conductivity and resistance to high temperatures make 12-inch SiC wafers ideal for high-power electronics used in automotive, renewable energy (solar, wind), and smart grid applications. These wafers meet the growing need for efficient power devices in the evolving global market for green energy and sustainable technology.
Tag: 12-inch SiC Wafer SiC Wafer 300mm SiC wafer
Company Details
Bronze Gleitlager
,
Bronze Sleeve Bushings
and
Graphite Plugged Bushings
from Quality China Factory
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
