deep trench mos capacitor 1000pf

{"cid":"91225864","title":"Deep Trench MOS Capacitor 1000pF 50V High Density Single Layer Chip For Stable DC Bias Operation","imgUrl":"https:\/\/img.chinax.com\/nimg\/44\/56\/df3829a7cc7b4208314d9c99943f-200x200-1.jpg","attrs":{"Price":"","Brand Name":"Hoan","Model Number":"HACC102T50V601","Minimum Order Quantity":"10 Pieces","Delivery Time":"5-7 working days for stock, 3-4 weeks for production","Chip Dimensions":"0.50 \u00d7 0.50 \u00d7 0.18 mm (\u00b125 \u00b5m); custom geometry up to 4:1 aspect ratio","Insulation Resistance":"\u226510\u2074 M\u03a9 @ rated voltage, 25\u00b0C","ESD Tolerance":">2 kV HBM, Class 2 (JESD22-A114)","Leakage Current":"<10 nA @ 25\u00b0C; <500 nA @ 200\u00b0C (at rated voltage)","Place of Origin":"Shaanxi, China","Operating \/ Storage Temperature":"-55\u00b0C to +200\u00b0C \/ -65\u00b0C to +150\u00b0C","DC Bias Stability":"Stable C-V under sustained rated DC bias; lot-level bias-temperature stress (BTS) screening","Payment Terms":"L\/C,D\/A,D\/P,T\/T","Supply Ability":"","Packaging Details":"","Certification":"ISO 9001:2015, RoHS","Hot Carrier Resistance":"Low-defect thermal SiO2 limits hot-carrier-induced drift under DC bias"}}