HongAn Microwave Co., Ltd.
| Chip Dimensions | 0.50 × 0.50 × 0.18 mm (±25 µm); custom geometry up to 4:1 aspect ratio |
| Insulation Resistance | ≥10⁴ MΩ @ rated voltage, 25°C |
| ESD Tolerance | >2 kV HBM, Class 2 (JESD22-A114) |
| Leakage Current | <10 nA @ 25°C; <500 nA @ 200°C (at rated voltage) |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| DC Bias Stability | Stable C-V under sustained rated DC bias; lot-level bias-temperature stress (BTS) screening |
| Payment Terms | L/C,D/A,D/P,T/T |
| Supply Ability | |
| Packaging Details | |
| Hot Carrier Resistance | Low-defect thermal SiO2 limits hot-carrier-induced drift under DC bias |
| Brand Name | Hoan |
| Place of Origin | Shaanxi, China |
| Certification | ISO 9001:2015, RoHS |
| Model Number | HACC102T50V601 |
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Product Specification
| Chip Dimensions | 0.50 × 0.50 × 0.18 mm (±25 µm); custom geometry up to 4:1 aspect ratio | Insulation Resistance | ≥10⁴ MΩ @ rated voltage, 25°C |
| ESD Tolerance | >2 kV HBM, Class 2 (JESD22-A114) | Leakage Current | <10 nA @ 25°C; <500 nA @ 200°C (at rated voltage) |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C | Delivery Time | 5-7 working days for stock, 3-4 weeks for production |
| DC Bias Stability | Stable C-V under sustained rated DC bias; lot-level bias-temperature stress (BTS) screening | Payment Terms | L/C,D/A,D/P,T/T |
| Supply Ability | Packaging Details | ||
| Hot Carrier Resistance | Low-defect thermal SiO2 limits hot-carrier-induced drift under DC bias | Brand Name | Hoan |
| Place of Origin | Shaanxi, China | Certification | ISO 9001:2015, RoHS |
| Model Number | HACC102T50V601 | ||
| High Light | Deep Trench MOS Capacitor 1000pF ，High Density MOS Capacitor 50V ，Single Layer Chip MOS Capacitor | ||
The HACC102T50V601 is a 1000 pF ±10% single-layer MOS capacitor rated at 50 V DC, built on a 3D deep-trench silicon architecture in which deep trenches etched into the silicon substrate multiply the effective electrode area within the same die footprint. The capacitor delivers 1000 pF in a 0.50 mm × 0.50 mm die; for reference, planar 1000 pF MOS capacitors in this series use 0.75 mm-class die, so the trench design provides roughly twice the capacitance per unit area for space-constrained hybrid modules. A MOS capacitor is a single-layer capacitor formed by a metal-oxide-semiconductor structure (thermal silicon dioxide on a conductive silicon substrate), valued for low ESL, stable capacitance and high insulation resistance.
| Nominal Capacitance | 1000 pF ±10% (1 kHz, 1.0 Vrms); ±5% available |
| Rated Voltage | 50 V DC |
| Dielectric Withstanding Voltage | 125 V DC (250% rated, 5 s, 100% tested) |
| Temperature Coefficient (TCC) | +35 ppm/°C over -55°C to +200°C |
| Dissipation Factor | ≤0.15% at 1 kHz, 1.0 Vrms |
| Q Factor | >2000 at 1 MHz |
| ESR | <0.1 Ω @ 1 GHz |
| Intrinsic Chip ESL | <0.05 nH (de-embedded) |
| Leakage Current | <10 nA at 25°C; <500 nA at 200°C (at rated voltage) |
| Insulation Resistance | ≥104 MΩ at rated voltage, 25°C |
| ESD Tolerance | >2 kV HBM, Class 2 per JESD22-A114 |
| Operating / Storage Temperature | -55°C to +200°C / -65°C to +150°C |
| Standard Die Size | 0.50 × 0.50 × 0.18 mm (±25 µm); custom geometry, aspect ratio up to 4:1 |
| Metallization | TiW-Au top (≥2.5 µm Au, wire bondable); TiW-Pt-Au backside for AuSn / conductive epoxy |
Compact DC bias decoupling and bypass in hybrid microcircuits and multi-chip modules; RF power amplifier bias networks; space-constrained microwave assemblies; filter and timing networks requiring bias-stable capacitance; high-density energy storage in pulsed circuits.
Company Details
Business Type:
Manufacturer
Year Established:
50%-60%
Total Annual:
>1000000
Employee Number:
>100
Ecer Certification：
Verified Supplier
Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t... Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of 800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in t...
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