| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | - |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 300mW Surface Mount SOT-23 |
| Mfr. Part # | 2L-MMBT5401 |
| Package | SOT-23 |
| Model Number | 2L-MMBT5401 |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 50nA | Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | - | type | NPN |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN 160V 600mA 300mW Surface Mount SOT-23 |
| Mfr. Part # | 2L-MMBT5401 | Package | SOT-23 |
| Model Number | 2L-MMBT5401 |
The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401.
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| VCBO | CollectorBase Voltage | IC = 100uA, IE = 0 | 180 | V | ||
| VCEO | CollectorEmitter Voltage | IC = 1 mA, IB = 0 | 160 | V | ||
| VEBO | EmitterBase Voltage | IE = 10uA, IC = 0 | 6 | V | ||
| IC | Collector Current Continuous | 600 | mA | |||
| PC | Collector Power Dissipation | (Ta=25 unless otherwise noted) | 300 | mW | ||
| RthJA | Thermal Resistance From Junction To Ambient | 416 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | VCB = 120V, IE = 0 | 180 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | VCE = 5V, IC = 10mA | 160 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IC = 10mA, IB = 1mA | 6 | V | ||
| ICBO | Collector cut-off current | VCB = 10V, IE = 0, f=1MHz | 1 | nA | ||
| IEBO | Emitter cut-off current | VEB = 4V, IC =0 | 1 | nA | ||
| hFE1 | DC current gain | VCE = 5V, IC=1mA | 100 | |||
| hFE2 | DC current gain | IC = 50mA, IB = 5mA | 300 | |||
| hFE3 | DC current gain | VCE = 5V, IC = 50mA | 300 | |||
| VCE(sat)1 | Collector-emitter saturation voltage | IC = 10mA, IB = 1mA | 0.15 | V | ||
| VCE(sat)2 | Collector-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.2 | V | ||
| VBE(sat)1 | Base-emitter saturation voltage | IC = 10mA, IB = 1mA | 0.6 | V | ||
| VBE(sat)2 | Base-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.77 | V | ||
| Cob | Collector output capacitance | VCB = 10V, IE = 0, f=1MHz | 10 | pF | ||
| fT | Transition frequency | VCE = 10V, IC = 10mA, f=100MHz | 50 | MHz | ||
| fT | Transition frequency | VCE = 10V, IC = 50mA, f=100MHz | 100 | MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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