| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT3904 |
| Package | SOT-23 |
| Model Number | MMBT3904 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 300MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23 | Mfr. Part # | MMBT3904 |
| Package | SOT-23 | Model Number | MMBT3904 |
This NPN transistor, the MMBT3906, is an epitaxial planar die construction device designed for general-purpose applications. It offers complementary functionality to PNP transistors and is recommended for various electronic circuits. The transistor is housed in a compact SOT-23 plastic surface-mounted package with 3 leads.
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | (Ta=25 unless otherwise noted) | 60 | V | |
| Collector-Emitter Voltage | VCEO | (Ta=25 unless otherwise noted) | 40 | V | |
| Emitter-Base Voltage | VEBO | (Ta=25 unless otherwise noted) | 6 | V | |
| Collector Current | IC | (Ta=25 unless otherwise noted) | 200 | mA | |
| Total Device Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | |
| Thermal Resistance Junction to Ambient | RJA | (Ta=25 unless otherwise noted) | 625 | /W | |
| Junction Temperature | TJ | (Ta=25 unless otherwise noted) | 150 | ||
| Storage Temperature | Tstg | (Ta=25 unless otherwise noted) | -55 | +150 | |
| Collector-base breakdown voltage | V(BR)CBO | IC= 10A, IE=0 | 60 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA, IB=0 | 40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | |
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.1 | A | |
| Collector cut-off current | ICEX | VCE=30V, VBE(off)=3V | 50 | nA | |
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | |
| DC current gain | hFE(1) | VCE=1V, IC=10mA | 100 | 300 | |
| DC current gain | hFE(2) | VCE=1V, IC= 50mA | 60 | ||
| DC current gain | hFE(3) | VCE=1V, IC= 100mA | 30 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=50mA, IB= 5mA | 0.3 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC= 50mA, IB= 5mA | 0.95 | V | |
| Transition frequency | fT | VCE=20V, IC=10mA, f=100MHz | 300 | MHz | |
| Delay Time | td | VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA | 35 | nS | |
| Rise Time | tr | VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA | 35 | nS | |
| Storage Time | ts | VCC=3V, IC=10mA, IB1=-IB2=1mA | 200 | nS | |
| Fall Time | tf | VCC=3V, IC=10mA, IB1=-IB2=1mA | 50 | nS |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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