| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 200MHz |
| type | PNP |
| Current - Collector(Ic) | - |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 40V 200MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT4403 |
| Package | SOT-23 |
| Model Number | MMBT4403 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 200MHz |
| type | PNP | Current - Collector(Ic) | - |
| Collector - Emitter Voltage VCEO | 40V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 40V 200MHz 300mW Surface Mount SOT-23 | Mfr. Part # | MMBT4403 |
| Package | SOT-23 | Model Number | MMBT4403 |
The MMBT4403 is a PNP transistor designed for switching applications. It offers key features suitable for various electronic circuits.
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | IC = -100uA, IE = 0 | -40 | V | ||
| Collector-Emitter Voltage | VCEO | IC = -1 mA, IB = 0 | -40 | V | ||
| Emitter-Base Voltage | VEBO | IE = -100uA, IC = 0 | -5 | V | ||
| Collector Current - Continuous | IC | -600 | mA | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 300 | mW | ||
| Thermal Resistance From Junction To Ambient | RthJA | 417 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | |||
| Collector cut-off current | ICBO | VCB = -35V, IE = 0 | -0.1 | uA | ||
| Collector cut-off current | ICEX | VEB = -4V, IC =0 | -0.1 | uA | ||
| Emitter cut-off current | IEBO | VCE = -1V, IC=-10mA | -30 | uA | ||
| DC current gain | hFE1 | VCE = -35V, V =0.4V EB | 60 | |||
| DC current gain | hFE2 | IC = -150mA, IB = -15mA | 100 | |||
| DC current gain | hFE3 | IC = -150mA, IB = -15mA | 200 | 300 | ||
| DC current gain | hFE4 | IC = -500mA, IB = -50mA | 100 | |||
| DC current gain | hFE5 | IC = -500mA, IB = -50mA | 225 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC = -150mA, IB = -15mA | -0.4 | -0.75 | V | |
| Collector-emitter saturation voltage | VCE(sat) | IC = -500mA, IB = -50mA | -1.2 | -1.3 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC = -150mA, IB = -15mA | -0.95 | V | ||
| Delay time | td | VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA | 30 | ns | ||
| Rise time | tr | VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA | 60 | ns | ||
| Storage time | ts | VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA | 200 | ns | ||
| Fall time | tf | VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA | 77 | ns | ||
| Transition frequency | fT | VCE = -20V, IC = -20mA, f=100MHz | 200 | MHz | ||
| Collector-breakdown voltage | V(BR)CBO | IC = -100uA, IE = 0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = -1 mA, IB = 0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE = -100uA, IC = 0 | -5 | V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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