Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 10uA |
| Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 900mW |
| Transition frequency(fT) | 140MHz |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 100V |
| Description | Bipolar (BJT) Transistor NPN 100V 600mA 140MHz 900mW Through Hole TO-92L |
| Mfr. Part # | 2SD667A |
| Package | TO-92L |
| Model Number | 2SD667A |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Current - Collector Cutoff | 10uA | Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 900mW | Transition frequency(fT) | 140MHz |
| type | NPN | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 100V | Description | Bipolar (BJT) Transistor NPN 100V 600mA 140MHz 900mW Through Hole TO-92L |
| Mfr. Part # | 2SD667A | Package | TO-92L |
| Model Number | 2SD667A |
The 2SD667/A is a low frequency power amplifier designed as a complementary pair with the 2SB647/A. It offers robust performance with high breakdown voltages and reliable DC current gain characteristics.
| Model | Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| 2SD667/A | Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 120 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 80/100 | V | |||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 5 | V | |||
| Collector cut-off current | ICBO | VCB=100V,IE=0 | 10 | A | |||
| Emitter cut-off current | IEBO | VEB=4V,IC=0 | 10 | A | |||
| DC current gain | hFE(1) | VCE=5V,IC=150mA | 60 | 320 | |||
| DC current gain | hFE(2) | VCE=5V,IC=500mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA,IB=50mA | 1 | V | |||
| Base-emitter voltage | VBE | VCE=5V,IC=150mA | 1.5 | V | |||
| 2SD667 | DC current gain (hFE(1)) | hFE(1) | VCE=5V,IC=150mA | 60 | 120/200/320 | ||
| Classification of hFE(1) | Rank B | VCE=5V,IC=150mA | 60 | 120 | |||
| Classification of hFE(1) | Rank C | VCE=5V,IC=150mA | 100 | 200 | |||
| 2SD667A | DC current gain (hFE(1)) | hFE(1) | VCE=5V,IC=150mA | 60 | 120/200/320 | ||
| Classification of hFE(1) | Rank B | VCE=5V,IC=150mA | 60 | 120 | |||
| Classification of hFE(1) | Rank C | VCE=5V,IC=150mA | 100 | 200 | |||
| 2SD667, 2SD667A | Transition frequency | fT | VCE=5V,IC=150mA | 140 | MHz | ||
| 2SD667, 2SD667A | Collector output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 12 | pF | ||
| 2SD667, 2SD667A | Collector Power Dissipation | PC | 900 | mW | |||
| 2SD667, 2SD667A | Junction Temperature | TJ | 150 | ||||
| 2SD667, 2SD667A | Storage Temperature | Tstg | -55 | 150 | |||
| 2SD667, 2SD667A | Thermal Resistance Junction to Ambient | RJA | 139 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!