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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and
China General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and

  1. China General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and

General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 50nA
Pd - Power Dissipation 250mW
Transition frequency(fT) 250MHz
type PNP
Current - Collector(Ic) 200mA
Collector - Emitter Voltage VCEO 40V
Operating Temperature -
Description Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 250mW Surface Mount SOT-23
Mfr. Part # MMBT3906
Package SOT-23
Model Number MMBT3906

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 50nA
Pd - Power Dissipation 250mW Transition frequency(fT) 250MHz
type PNP Current - Collector(Ic) 200mA
Collector - Emitter Voltage VCEO 40V Operating Temperature -
Description Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 250mW Surface Mount SOT-23 Mfr. Part # MMBT3906
Package SOT-23 Model Number MMBT3906

Product Overview

The MMBT3906 NP is a general-purpose PNP transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary NPN type, the MMBT3904, is also available. This transistor offers a collector current capability of -200mA and a low maximum voltage rating of -40V.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Model: MMBT3906 NP
  • Package Type: SOT-23

Technical Specifications

SymbolParameterConditionsMin.Max.Unit
Maximum Ratings
VCBOCollector-base voltageOpen emitter--40V
VCEOCollector-emitter voltageOpen base--40V
VEBOEmitter-base voltageOpen collector--6V
ICCollector current (DC)--200mA
ICMPeak collector current--200mA
IBMPeak base current--100mA
PtotTotal power dissipationTamb25C250mW
TstgStorage temperature-65+150C
TjJunction temperature150C
Electrical Characteristics
ICBOCollector cut-off currentIE = 0; VCB = -30 V--50nA
IEBOEmitter cut-off currentIC = 0; VEB =- 6 V--50nA
hFEDC current gainVCE = -1V; IC= -0.1mA60300
IC = -1mA80-
IC = -10mA100-
IC = -50mA60-
IC = -100mA30-
VCEsatCollector-emitter saturation voltageIC = -10mA; IB = -1mA--200mV
IC = -50mA; IB = -5mA--300mV
VBEsatBase-emitter saturation voltageIC = -10mA; IB = -1mA--850mV
IC = -50mA; IB = -5mA--950mV
CcCollector capacitanceIE = Ie= 0; VCB = -5 V; f = 1 MHz-4.5pF
CeEmitter capacitanceIC = Ic= 0; VEB = -500 mV; f = 1 MHz-10pF
fTTransition frequencyIC = -10mA; VCE = -20 V; f = 100MHz250-MHz
NFNoise figureIC = -100A; VCE = -5V; RS = 1 k;f = 10Hz to15.7 kHz-4dB
Switching timeston (Turn-on time)ICon= -10mA; IBon = -1mA; IBoff= -1mA-65ns
td (delay time)-35ns
tr (rise time)-35ns
toff (turn-off time)-300ns
ts (storage time)-225ns
tf (fall time)-75ns

2306301522_JSMSEMI-MMBT3906_C916375.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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