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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China NPN Power Transistor with High Voltage Capacity JSMSEMI MJE350G Collector
China NPN Power Transistor with High Voltage Capacity JSMSEMI MJE350G Collector

  1. China NPN Power Transistor with High Voltage Capacity JSMSEMI MJE350G Collector

NPN Power Transistor with High Voltage Capacity JSMSEMI MJE350G Collector

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Emitter-Base Voltage(Vebo) 3V
Current - Collector Cutoff 100uA
Pd - Power Dissipation 20W
type NPN
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 300V
Description Bipolar (BJT) Transistor NPN 300V 500mA 20W Through Hole TO-126
Mfr. Part # MJE350G
Package TO-126
Model Number MJE350G

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 3V Current - Collector Cutoff 100uA
Pd - Power Dissipation 20W type NPN
Current - Collector(Ic) 500mA Collector - Emitter Voltage VCEO 300V
Description Bipolar (BJT) Transistor NPN 300V 500mA 20W Through Hole TO-126 Mfr. Part # MJE350G
Package TO-126 Model Number MJE350G

Product Overview

The MJE350G is an NPN Power Transistor designed for high voltage and general purpose applications. It offers a high collector-emitter sustaining voltage of -300V, a minimum DC current gain of 100 at -50mA, and a low collector saturation voltage of -1.0V (Max.) at -50mA. This transistor is the complement to the NPN MJE340.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Model: MJE350G
  • Type: NPN Power Transistor

Technical Specifications

SymbolParameterConditionsMinMaxUnit
VCEO(SUS)Collector-Emitter Sustaining VoltageIC= -1.0mA; IB= 0-300V
V(BR)CBOCollector-Base Breakdown VoltageIC= -1.0mA; IE= 0-300V
V(BR)EBOEmitter-Base Breakdown VoltageIE= -1.0mA; IC= 0-3V
VCE(sat)Collector-Emitter Saturation VoltageIC= -50mA; IB= -5mA-1.0V
ICBOCollector Cutoff CurrentVCB= -300V; IE= 0-0.1mA
IEBOEmitter Cutoff CurrentVEB= -3V; IC= 0-0.1mA
hFEDC Current GainIC= -50m A ; VCE= -10V30240
SymbolParameterValueUnit
VCBOCollector-Base Voltage-300V
VCEOCollector-Emitter Voltage-300V
VEBOEmitter-Base Voltage-3V
ICCollector Current-Continuous-0.5A
PCCollector Power Dissipation20W
TiJunction Temperature150
TstgStorage Temperature Range-65~150
SymbolParameterMaxUnit
Rth j-cThermal Resistance,Junction to Case6.25/W

2409302232_JSMSEMI-MJE350G_C5296720.pdf

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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