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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China High power PNP transistor JSMSEMI MJ15025-JSM for audio and disk head positioner
China High power PNP transistor JSMSEMI MJ15025-JSM for audio and disk head positioner

  1. China High power PNP transistor JSMSEMI MJ15025-JSM for audio and disk head positioner

High power PNP transistor JSMSEMI MJ15025-JSM for audio and disk head positioner

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 500uA
Pd - Power Dissipation 250W
Transition frequency(fT) 4MHz
type PNP
Current - Collector(Ic) 16A
Collector - Emitter Voltage VCEO 250V
Description Bipolar (BJT) Transistor PNP 250V 16A 4MHz 250W Through Hole TO-3
Mfr. Part # MJ15025-JSM
Package TO-3
Model Number MJ15025-JSM

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 500uA
Pd - Power Dissipation 250W Transition frequency(fT) 4MHz
type PNP Current - Collector(Ic) 16A
Collector - Emitter Voltage VCEO 250V Description Bipolar (BJT) Transistor PNP 250V 16A 4MHz 250W Through Hole TO-3
Mfr. Part # MJ15025-JSM Package TO-3
Model Number MJ15025-JSM

Product Overview

The MJ15023-MJ15025 series are PNP power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a high DC current gain (hFE = 15 Min @ IC = 8A), an excellent safe operating area, and are complementary to MJ15022 and MJ15024 types. Packaged in a TO-3 case.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Package Type: TO-3

Technical Specifications

SymbolParameterConditionsMJ15023 ValueMJ15025 ValueUnit
VCEO(SUS)Collector-emitter sustaining voltageIC=0.1A ;IB=0-200-250V
VCEsat-1Collector-emitter saturation voltageIC=8A; IB=0.8A-1.4V
VCEsat-2Collector-emitter saturation voltageIC=16A; IB=3.2A-4.0V
VBEBase-emitter on voltageIC=8A ; VCE=4V-2.2V
ICEOCollector cut-off currentVCE=150V; IB=0-0.5mA
VCE=200V; IB=0-0.5mA
ICEXCollector cut-off currentVCE=200V; VBE(off)=1.5V-0.25mA
VCE=250V; VBE(off)=1.5V-0.25mA
IEBOEmitter cut-off currentVEB=5V; IC=0-0.5mA
hFE-1DC current gainIC=8A ; VCE=4V1560
IC=8A ; VCE=4V1560
hFE-2DC current gainIC=16A ; VCE=4V5
Is/bSecond breakdown collector current with base forward biasedVCE=50Vdc,t=0.5 s,Nonrepetitive-5.0A
Is/bSecond breakdown collector current with base forward biasedVCE=80Vdc,t=0.5 s,Nonrepetitive-2.0A
COBOutput capacitanceIE=0 ; VCB=10V;f=1.0MHz500pF
fTTransition frequencyIC=1A ; VCE=10V;f=1.0MHz4MHz
VCBOCollector-base voltageOpen emitter-350-400V
VCEOCollector-emitter voltageOpen base-200-250V
VEBOEmitter-base voltageOpen collector-5V
ICCollector current-16A
ICMCollector current-peak-30A
IBBase current-5A
PDTotal power dissipationTC=25250W
TjJunction temperature150
TstgStorage temperature-65~200
Rth j-cThermal resistance junction to case0.70/W

2307121054_JSMSEMI-MJ15025-JSM_C7436407.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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