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Hefei Purple Horn E-Commerce Co., Ltd.

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China High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioner
China High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioner

  1. China High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioner

High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioner

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 500uA
Pd - Power Dissipation 250W
Transition frequency(fT) 4MHz
type NPN
Current - Collector(Ic) 16A
Collector - Emitter Voltage VCEO 200V
Operating Temperature -
Description Bipolar (BJT) Transistor NPN 200V 16A 4MHz 250W Through Hole TO-3
Mfr. Part # MJ15022G-JSM
Package TO-3
Model Number MJ15022G-JSM

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 500uA
Pd - Power Dissipation 250W Transition frequency(fT) 4MHz
type NPN Current - Collector(Ic) 16A
Collector - Emitter Voltage VCEO 200V Operating Temperature -
Description Bipolar (BJT) Transistor NPN 200V 16A 4MHz 250W Through Hole TO-3 Mfr. Part # MJ15022G-JSM
Package TO-3 Model Number MJ15022G-JSM

Product Overview

The MJ15022/15024G are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature an excellent safe operating area and high DC current gain. These transistors are complements to the MJ15023G and MJ15025G types and come in a TO-3 package.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Package Type: TO-3

Technical Specifications

SymbolParameterConditionsMJ15022GMJ15024GUnit
VCEO(SUS)Collector-emitter sustaining voltageIC=0.1A ;IB=0200250V
VCEsat-1Collector-emitter saturation voltageIC=8A; IB=0.8A1.4V
VCEsat-2Collector-emitter saturation voltageIC=16A; IB=3.2A4.0V
VBEBase-emitter on voltageIC=8A ; VCE=4V2.2V
ICEOCollector cut-off currentVCE=150V; IB=0200-mA
VCE=200V; IB=0-0.5mA
ICEXCollector cut-off currentVCE=200V; VBE(off)=1.5V-0.25mA
VCE=250V; VBE(off)=1.5V-0.25mA
IEBOEmitter cut-off currentVEB=5V; IC=00.5mA
hFE-1DC current gainIC=8A ; VCE=4V15-60
IC=8A ; VCE=4V15-
hFE-2DC current gainIC=16A ; VCE=4V5
Is/bSecond breakdown collector current with base forward biasedVCE=50Vdc,t=0.5 s5.0A
VCE=80Vdc,t=0.5 s,Nonrepetitive2.0A
COBOutput capacitanceIE=0 ; VCB=10V;f=1.0MHz500pF
fTTransition frequencyIC=1A ; VCE=10V;f=1.0MHz4MHz
Rth j-cThermal resistance junction to case0.70/W

2401121850_JSMSEMI-MJ15022G-JSM_C20606852.pdf

Company Details

Bronze Gleitlager

,

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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