Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 150MHz |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 50V 150mA 150MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | A1015 |
| Package | SOT-23 |
| Model Number | A1015 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 150MHz |
| type | PNP | Number | 1 PNP |
| Current - Collector(Ic) | 150mA | Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor PNP 50V 150mA 150MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | A1015 | Package | SOT-23 |
| Model Number | A1015 |
The A1015 is a PNP epitaxial silicon planar design general-purpose switching transistor. It features a collector-emitter voltage of -50V and a collector current of -0.15A. Designed for various switching applications, this transistor complies with ER RoHS 2002/95/EC directives and offers a transition frequency greater than 80MHz.
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Collector-Base Voltage | VCBO | -50 | V | |||
| Collector-Emitter Voltage | VCEO | -50 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -0.15 | A | |||
| Total Device Dissipation (FR-5 BOARD) | PD | 0.2 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 625 | OC/W | |||
| Junction Temperature | TJ | 150 | OC | |||
| Storage Temperature | TSTG | -55 | +150 | OC | ||
| Collector-Base breakdown voltage | V(BR)CBO | IC=-100uA,IE=0 | -50 | V | ||
| Collector-Emitter breakdown voltage | V(BR)CEO | IC=-0.1mA,IB=0 | -50 | V | ||
| Emitter-Base breakdown voltage | V(BR)EBO | IE=-100uA,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50V,IC=0 | -0.1 | uA | ||
| Collector cut-off current | ICEX | -0.1 | uA | |||
| Base cut-off current | IBEX | -0.1 | uA | |||
| Emitter cut-off current | IEBO | VEB=-5V,IC=0 | -0.1 | uA | ||
| DC current gain | HFE | IC=-2mA,VCE=-6V | 130 | 400 | ||
| DC current gain | HFE | IC=-10mA,IB=-1mA | 100 | |||
| DC current gain | HFE | IC=-100mA,IB=-10mA | 100 | |||
| Collector-Emitter saturation voltage | VCE(SAT) | IC=-10mA,IB=-1mA | -0.2 | V | ||
| Collector-Emitter saturation voltage | VCE(SAT) | IC=-100mA,IB=-10mA | -0.3 | V | ||
| Base-Emitter Saturation voltage | VBE(SAT) | IC=-10mA,IB=-1mA | -0.85 | V | ||
| Base-Emitter Saturation voltage | VBE(SAT) | IC=-100mA,IB=-10mA | -0.95 | V | ||
| Input capacitance | CIB | VCB=-5V,IE=0,f=1MHZ | 4.0 | pF | ||
| Output capacitance | COB | VEB=-0.5V,IC=0,f=1MHZ | 8.0 | pF | ||
| Transition frequency | fT | IC=-1mA,VCE=-10V, f=30MHZ | 150 | MHZ | ||
| Delay time | td | VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA | 35 | nS | ||
| Rise time | tr | VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA | 35 | nS | ||
| Storage time | ts | VCC=-3V,VBE=0.5V, IB1=IB2=-1mA | 200 | nS | ||
| Fall time | tf | VCE=-25V,IB=0 | 50 | nS |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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