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Hefei Purple Horn E-Commerce Co., Ltd.

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China Epitaxial silicon planar PNP transistor for switching applications RoHS
China Epitaxial silicon planar PNP transistor for switching applications RoHS

  1. China Epitaxial silicon planar PNP transistor for switching applications RoHS

Epitaxial silicon planar PNP transistor for switching applications RoHS

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Description SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # 2SA1015
Package SOT-23
Model Number 2SA1015

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  1. Product Details
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Product Specification

Description SOT-23 Single Bipolar Transistors RoHS Mfr. Part # 2SA1015
Package SOT-23 Model Number 2SA1015

PNP General Purpose Switching Transistor - BA

This PNP epitaxial silicon planar transistor is designed for general purpose switching applications. It offers a collector-emitter voltage of -50V and a collector current of -0.15A, with a total device dissipation of 0.2W on an FR-5 board. The transistor is RoHS 2002/95/EC compliant and features a transition frequency greater than 80MHz. It is supplied in a SOT-23 package.

Product Attributes

  • Brand: Not specified (Implied 2SA1015)
  • Origin: Not specified
  • Material: Epitaxial silicon, planar design
  • Color: Not specified
  • Certifications: RoHS 2002/95/EC

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -0.15 A
Total Device Dissipation (FR-5 BOARD) PD 0.2 W
Thermal Resistance Junction to Ambient RJA 625 OC/W
Junction Temperature TJ 150 OC
Storage Temperature TSTG -55 +150 OC
Collector-Base breakdown voltage V(BR)CBO IC=-100uA,IE=0 -50 V
Collector-Emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -50 V
Emitter-Base breakdown voltage V(BR)EBO IE=-100uA,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IC=0 -0.1 uA
Collector cut-off current ICEX -0.1 uA
Base cut-off current IBEX -0.1 uA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA
DC current gain HFE IC=-2mA,VCE=-6V 130 400
DC current gain HFE IC=-10mA,IB=-1mA 100
DC current gain HFE IC=-100mA,IB=-10mA 100
Collector-Emitter saturation voltage VCE(SAT) IC=-10mA,IB=-1mA -0.2 V
Collector-Emitter saturation voltage VCE(SAT) IC=-100mA,IB=-10mA -0.3 V
Base-Emitter Saturation voltage VBE(SAT) IC=-10mA,IB=-1mA -0.85 V
Base-Emitter Saturation voltage VBE(SAT) IC=-100mA,IB=-10mA -0.95 V
Input capacitance CIB VCB=-5V,IE=0,f=1MHZ 4.0 pF
Output capacitance COB VEB=-0.5V,IC=0,f=1MHZ 8.0 pF
Transition ferquency fT IC=-1mA,VCE=-10V, f=30MHZ 150 MHZ
Delay time td VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA 35 nS
Rise time tr VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA 35 nS
Storage time ts VCC=-3V,VBE=0.5V, IB1=IB2=-1mA 200 nS
Fall time tf VCE=-25V,IB=0 50 nS

2512041144_GOODWORK-2SA1015_C53086333.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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