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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
  • Verified Supplier
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China High Voltage Plastic Encapsulated NPN Transistor GOODWORK CZT5551 Designed for
China High Voltage Plastic Encapsulated NPN Transistor GOODWORK CZT5551 Designed for

  1. China High Voltage Plastic Encapsulated NPN Transistor GOODWORK CZT5551 Designed for

High Voltage Plastic Encapsulated NPN Transistor GOODWORK CZT5551 Designed for

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 50nA
Pd - Power Dissipation 2W
Transition frequency(fT) 100MHz
type NPN
Number 1 NPN
Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 160V
Operating Temperature -55℃~+150℃@(Tj)
Description Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 2W Surface Mount SOT-223
Mfr. Part # CZT5551
Package SOT-223
Model Number CZT5551

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 50nA
Pd - Power Dissipation 2W Transition frequency(fT) 100MHz
type NPN Number 1 NPN
Current - Collector(Ic) 600mA Collector - Emitter Voltage VCEO 160V
Operating Temperature -55℃~+150℃@(Tj) Description Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 2W Surface Mount SOT-223
Mfr. Part # CZT5551 Package SOT-223
Model Number CZT5551

Product Description

The CZT5551 is an NPN Plastic-Encapsulated Transistor designed for applications in telephone switching circuits and as an amplifier. It features a high collector-emitter voltage of BVCEO=160V and high current gain.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Plastic-Encapsulated
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Collector-base breakdown voltageBVCBOIC = 100AIE = 0180V
Collector-emitter breakdown voltageBVCEOIC = 1mAIB = 0160V
Emitter-base breakdown voltageBVEBOIE = 100AIC = 06V
Collector cut-off currentICBOVCB =120VIE = 050nA
Emitter cut-off currentIEBOVEB = 4VIC = 050nA
DC current gainhFEVCE = 5VIC= 1mA80
VCE = 5VIC= 10mA80400
Collector-emitter saturation voltageVCE(sat)IC = 50mAIB = 5mA0.2V
Base -emitter saturation voltageVBE(sat)IC = 50mAIB = 5mA1.0V
Transition frequencyfTVCE = 10VIB = 10mA100MHZ
Output CapacitanceCobVCB =10V,IE = 0,f=1MHz6pF

hFE Classification

ClassificationRange
A80~170
B150~240
C200~400

Absolute Maximum Ratings (Ta=25)

ParameterSymbolValueUnit
Collector-Base VoltageBVCBO180V
Collector-Emitter VoltageBVCEO160V
Emitter-Base VoltageBVEBO6V
Collector CurrentIC600mA
Collector Power DissipationPC2W
Junction TemperatureTj150
Storage TemperatureTstg-55150

Package Dimensions (Millimeter/Inches)

SymbolMillimeter Min.Millimeter Max.Inches Min.Inches Max.
A1.501.800.0590.071
A10.000.100.0000.004
A21.501.700.0590.067
b0.650.750.0260.030
c0.200.300.0080.012
D6.406.600.2520.260
D12.903.100.1140.122
E3.303.700.1300.146
E16.857.150.2700.281
e2.202.400.0870.094
e14.404.800.1730.189
L1.651.850.0650.073
L10.901.150.0350.045

2504101957_GOODWORK-CZT5551_C46962152.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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