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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China TO252 Plastic Encapsulate Transistor GOODWORK MJD122 Featuring High DC Current
China TO252 Plastic Encapsulate Transistor GOODWORK MJD122 Featuring High DC Current

  1. China TO252 Plastic Encapsulate Transistor GOODWORK MJD122 Featuring High DC Current

TO252 Plastic Encapsulate Transistor GOODWORK MJD122 Featuring High DC Current

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Current - Collector Cutoff 10uA
Pd - Power Dissipation 1.75W
DC Current Gain 1000@4A,4V
type NPN
Current - Collector(Ic) 8A
Collector - Emitter Voltage VCEO 100V
Description 1.75W 1000@4A,4V NPN 8A 100V TO-252 Single Bipolar Transistors RoHS
Mfr. Part # MJD122
Package TO-252
Model Number MJD122

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 10uA Pd - Power Dissipation 1.75W
DC Current Gain 1000@4A,4V type NPN
Current - Collector(Ic) 8A Collector - Emitter Voltage VCEO 100V
Description 1.75W 1000@4A,4V NPN 8A 100V TO-252 Single Bipolar Transistors RoHS Mfr. Part # MJD122
Package TO-252 Model Number MJD122

Product Overview

The MJD122 M is a TO-252 Plastic-Encapsulate Transistor featuring high DC current gain and a built-in damper diode at the E-C junction. It is electrically similar to the popular TIP122 and complementary to the MJD127.

Product Attributes

  • Brand: MJD
  • Package: TO-252

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Collector-base voltageBVCBO100V
Collector-emitter voltageBVCEO100V
Emitter-base voltageBVEBO5V
Collector current (DC)IC8A
Collector current (Pulse)ICP8A
Collector Dissipation (TA =25 )PC1.75W
Collector Dissipation (TC =25 )PC20W
Junction TemperatureTj150
Storage TemperatureTstg-55150
Collector cut-off currentICBOVCB = 100V, IE = 010A
Collector cut-off currentICEOVCE = 50V, IE = 010A
Emitter cut-off currentIEBOVEB = 5V, IC = 02mA
DC current gain*hFEVCE= 4V, IC= 4A1000
DC current gain*hFEVCE= 4V, IC= 8A500
Collector-emitter saturation voltage*VCE(sat)IC =4A, IB = 16mA2V
Collector-emitter saturation voltage*VCE(sat)IC =8A, IB = 80mA4V
Baser-emitter saturation voltage*VBE(sat)IC =8A, IB = 80mA4.5V
Base-emitter on voltage*VBE (on)VCE= 4V, IC= 4A2.8V
Output capacitanceCobVCB= 10V, f=1MHz200pF

2504101957_GOODWORK-MJD122_C46061579.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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