| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 150MHz |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 100V 1A 150MHz 250mW Surface Mount SOT-23 |
| Mfr. Part # | FMMT493 |
| Package | SOT-23 |
| Model Number | FMMT493 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 150MHz |
| type | NPN | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 100V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 100V 1A 150MHz 250mW Surface Mount SOT-23 | Mfr. Part # | FMMT493 |
| Package | SOT-23 | Model Number | FMMT493 |
This NPN transistor is designed for switching and AF amplifier applications. It offers reliable performance in various electronic circuits.
| Parameter | Symbol | Min. | Max. | Unit | Conditions |
| Collector Base Voltage | VCBO | 120 | V | ||
| Collector Emitter Voltage | VCEO | 100 | V | ||
| Emitter Base Voltage | VEBO | 5 | V | ||
| Collector Current | IC | 1 | A | ||
| Maximum Power Dissipation | PD | 250 | mW | @ 25 ambient temperature | |
| Junction Temperature | TJ | 150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | ||
| DC Current Gain | HFE | 100 | 300 | VCE = 10 V, IC = 1 mA | |
| 100 | -- | VCE = 10 V, IC = 250 mA | |||
| 60 | -- | VCE = 10 V, IC = 500 mA | |||
| Collector Base Cutoff Current | ICBO | 100 | nA | VCB = 100V | |
| Emitter Base Cutoff Current | IEBO | 100 | nA | VEB = 4 V | |
| Collector Base Breakdown Voltage | V(BR)CBO | 120 | -- | V | IC = 100 A |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 100 | -- | V | IC = 1 mA |
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | -- | V | IE = 100 A |
| Collector Emitter Saturation Voltage | VCE(sat) | -- | 300 | mV | IC = 500 mA, IB = 50 mA |
| -- | 600 | IC = 1 A, IB = 100 mA | |||
| Base Emitter Saturation Voltage | VBE(sat) | -- | 1.15 | V | IC = 1 A, IB = 100 mA |
| Base Emitter On Voltage | VBE(on) | -- | 1 | V | VCE = 10 V, IC = 1 A |
| Transition Frequency | FT | 150 | -- | MHz | VCE = 10 V, IC = 50 mA, f = 100 MHz |
| Output Capacitance | Cob | -- | 10 | pF | VCB = 10 V, f = 1 MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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