| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT3904 |
| Package | SOT-23 |
| Model Number | MMBT3904 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 300MHz |
| type | NPN | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23 | Mfr. Part # | MMBT3904 |
| Package | SOT-23 | Model Number | MMBT3904 |
The MMBT3904 is an NPN transistor designed for general-purpose applications. It offers complementary functionality to the MMBT3906, providing flexibility in circuit design. This transistor is suitable for various switching and amplification tasks.
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| VCBO | CollectorBase Voltage | 60 | V | |||
| VCEO | CollectorEmitter Voltage | 40 | V | |||
| VEBO | EmitterBase Voltage | 6 | V | |||
| IC | Collector Current Continuous | 200 | mA | |||
| PC | Collector Power Dissipation | (Ta=25) | 200 | mW | ||
| RthJA | Thermal Resistance From Junction To Ambient | 625 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC = 10uA, IE = 0 | 60 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 1 mA, IB = 0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE = 10uA, IC = 0 | 6 | V | ||
| ICEX | Collector cut-off current | VCB = 60V, IE = 0 | 100 | nA | ||
| hFE1 | DC current gain | VCE = 30V, VEB(off) =3V | 100 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.3 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC = 50mA, IB = 5mA | 0.95 | V | ||
| fT | Transition frequency | VCE = 1V, IC = 100mA | 300 | MHz | ||
| ICBO | Collector cut-off current | VCB = 60V, IE = 0 | 100 | nA | ||
| IEBO | Emitter cut-off current | VEB = 5V, IC =0 | 100 | nA | ||
| hFE2 | DC current gain | VCE = 1V, IC=10mA | 100 | 300 | ||
| hFE3 | DC current gain | VCE = 1V, IC=10mA | 100 | 300 | ||
| td | Delay time | VCC = 3V, IC = 10mA | 35 | ns | ||
| tr | Rise time | IB1=1mA IB2= 60mA | 35 | ns | ||
| ts | Storage time | IC = 50mA, IB = 5mA | 200 | ns | ||
| tf | Fall time | VCE = 20V, IC = 10mA, f=100MHz | 50 | ns |
| Rank | Range |
| L | 100-200 |
| H | 200-300 |
| HFE | 100-300 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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