Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 550mW |
| Transition frequency(fT) | 50MHz |
| type | PNP |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 80V 1A 50MHz 550mW Surface Mount SOT-89 |
| Mfr. Part # | LBTP180Y3T1G |
| Package | SOT-89 |
| Model Number | LBTP180Y3T1G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 550mW | Transition frequency(fT) | 50MHz |
| type | PNP | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 80V | Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 80V 1A 50MHz 550mW Surface Mount SOT-89 | Mfr. Part # | LBTP180Y3T1G |
| Package | SOT-89 | Model Number | LBTP180Y3T1G |
The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, with the S-prefix variant meeting AEC-Q101 qualification and PPAP capability for automotive applications. These devices comply with RoHS requirements and are Halogen Free.
| Parameter | Symbol | Limits | Unit | Notes |
| Peak base current | IBM | -200 | mA | |
| CollectorBase Voltage | VCBO | -100 | V | |
| CollectorEmitter Voltage | VCEO | -80 | V | |
| EmitterBase Voltage | VEBO | -5 | V | |
| Collector Current(DC) | IC | -1 | A | |
| Peak collector current | ICM | -1.5 | A | |
| Total Device Dissipation, FR4 Board | PD | 550 | mW | @ TA = 25C |
| Derate above 25C | 225 | mW/C | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 4.4 | C/W | |
| Thermal Resistance, JunctiontoCase | RJC | 50 | C/W | |
| Junction and Storage temperature | TJ,Tstg | -65+150 | C | |
| Collector Cutoff Current | ICBO | -100 | nA | (VCB = -30 V,IE = 0) |
| Collector Cutoff Current | ICBO | -250 | nA | (VCB = -30 V,IE = 0,Tj = 125 C) |
| Emitter Cut-off Current | IEBO | -100 | nA | (VEB =-5V, IC =0) |
| DC Current Gain | HFE | 40 | - | (VCE =-2V, IC =-5mA) |
| DC Current Gain | HFE | - | - | (VCE =-2V, IC =-150mA) |
| DC Current Gain | HFE | - | - | (VCE =-2V, IC =-500mA) |
| CollectorEmitter Saturation Voltage | VCE(sat) | -500 | mV | (IC = 500 mA, IB = 50 mA) |
| Base-emitter voltage | VBE | -1 | V | (IC = 500 mA,VCE = 2 V) |
| Transition Frequency | fT | 50 | MHz | (IC = 10 mA,VCE = 5 V,f = 100 MHz) |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -80 | V | (IC = -1 mA, IB = 0) |
| CollectorBase Breakdown Voltage | VBR(CBO) | -100 | V | (IC = -100 A, IE = 0) |
| EmitterBase Breakdown Voltage | VBR(EBO) | -5 | V | (IE = -100 A, IC = 0) |
| Collector-Emitter cutoff Current | ICEO | -10 | A | (VCE= -80V,IB=0) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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