| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 20nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 200MHz |
| type | PNP |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | S-LMBT2907ALT1G |
| Package | SOT-23 |
| Model Number | S-LMBT2907ALT1G |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 20nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 200MHz |
| type | PNP | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 300mW Surface Mount SOT-23 | Mfr. Part # | S-LMBT2907ALT1G |
| Package | SOT-23 | Model Number | S-LMBT2907ALT1G |
The LMBT2907LT1G and LMBT2907ALT1G are PNP Silicon General Purpose Transistors in a SOT-23 package. These devices are AEC-Q101 Qualified and PPAP Capable, suitable for automotive and other applications requiring unique site device shipping. They are compliance with RoHS requirements.
| Characteristic | Symbol | LMBT2907 (Min) | LMBT2907 (Max) | LMBT2907A (Min) | LMBT2907A (Max) | Unit |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | V CEO | 40 | 60 | Vdc | ||
| CollectorBase Voltage | V CBO | 60 | 60 | Vdc | ||
| EmitterBase Voltage | V EBO | 5.0 | 5.0 | Vdc | ||
| Collector Current Continuous | I C | 600 | 600 | mAdc | ||
| THERMAL CHARACTERISTICS (FR5 Board) | ||||||
| Total Device Dissipation | PD | 225 | 225 | mW | ||
| Derate above 25C | 1.8 | 1.8 | mW/C | |||
| Thermal Resistance, Junction to Ambient | RJA | 556 | 556 | C/W | ||
| THERMAL CHARACTERISTICS (Alumina Substrate) | ||||||
| Total Device Dissipation | PD | 300 | 300 | mW | ||
| Derate above 25C | 2.4 | 2.4 | mW/C | |||
| Thermal Resistance, Junction to Ambient | RJA | 417 | 417 | C/W | ||
| Junction and Storage Temperature | TJ , Tstg | 55 | +150 | 55 | +150 | C |
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 40 | 60 | Vdc | ||
| CollectorEmitter Breakdown Voltage | V (BR)CBO | 60 | 60 | Vdc | ||
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | 5.0 | Vdc | ||
| Collector Cutoff Current | I CEX | 50 | 50 | nAdc | ||
| Collector Cutoff Current | I CBO | 0.020 | 0.010 | Adc | ||
| Collector Cutoff Current (TA =125C) | I CBO | 20 | 10 | Adc | ||
| Base Current | I B | 50 | 50 | nAdc | ||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | h FE | 35 | 75 | |||
| DC Current Gain | h FE | 50 | 100 | |||
| DC Current Gain | h FE | 75 | 100 | |||
| DC Current Gain (IC = 150mAdc) | h FE | 100 | 300 | |||
| DC Current Gain (IC = 500mAdc) | h FE | 30 | 50 | |||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.4 | 0.4 | Vdc | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 1.6 | 1.6 | Vdc | ||
| BaseEmitter Saturation Voltage | V BE(sat) | 1.3 | 1.3 | Vdc | ||
| BaseEmitter Saturation Voltage | V BE(sat) | 2.6 | 2.6 | Vdc | ||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | f T | 200 | 200 | MHz | ||
| Output Capacitance | C obo | 8.0 | 8.0 | pF | ||
| Input Capacitance | C ibo | 30 | 30 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| TurnOn Time | t on | 45 | 45 | ns | ||
| Delay Time | t d | 10 | 10 | ns | ||
| Rise Time | t r | 40 | 40 | ns | ||
| Fall Time | t f | 60 | 60 | ns | ||
| Storage Time | t s | 280 | 280 | ns | ||
| TurnOff Time | t off | 200 | 200 | ns | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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