| Emitter-Base Voltage(Vebo) | 3V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 225mW |
| Transition frequency(fT) | 600MHz |
| type | NPN |
| Current - Collector(Ic) | 50mA |
| Collector - Emitter Voltage VCEO | 15V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 15V 50mA 600MHz 225mW Surface Mount SOT-23 |
| Mfr. Part # | LMBT918LT1G |
| Package | SOT-23 |
| Model Number | LMBT918LT1G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 3V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 225mW | Transition frequency(fT) | 600MHz |
| type | NPN | Current - Collector(Ic) | 50mA |
| Collector - Emitter Voltage VCEO | 15V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 15V 50mA 600MHz 225mW Surface Mount SOT-23 | Mfr. Part # | LMBT918LT1G |
| Package | SOT-23 | Model Number | LMBT918LT1G |
The LMBT918LT1G is a VHF/UHF NPN Silicon Transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications requiring high-frequency performance. It offers reliable operation within specified voltage and current limits, making it suitable for amplifier and signal processing circuits.
| Characteristic | Symbol | Min | Max | Unit | Conditions |
| MAXIMUM RATINGS | V CEO | 15 | Vdc | ||
| V CBO | 30 | Vdc | |||
| V EBO | 3.0 | Vdc | |||
| I C (Continuous) | 50 | mAdc | |||
| THERMAL CHARACTERISTICS (FR-5 Board) | PD | 225 | mW | TA = 25C | |
| RJA | 556 | C/W | |||
| THERMAL CHARACTERISTICS (Alumina Substrate) | PD | 300 | mW | TA = 25C | |
| RJA | 417 | C/W | |||
| JUNCTION AND STORAGE TEMPERATURE | TJ , Tstg | 55 | +150 | C | |
| OFF CHARACTERISTICS | V (BR)CEO | 15 | Vdc | I C = 3.0 mAdc, I B = 0 | |
| V (BR)CBO | 30 | Vdc | I C = 1.0 Adc, I E = 0 | ||
| V (BR)EBO | 3.0 | Vdc | I E = 10 Adc, I C = 0 | ||
| COLLECTOR CUTOFF CURRENT | I CBO | 50 | nAdc | V CB = 15 Vdc, I E = 0 | |
| ON CHARACTERISTICS | hFE | 20 | I C = 3.0 mAdc, V CE = 1.0 Vdc | ||
| VCE(sat) | 0.4 | Vdc | I C = 10 mAdc, I B = 1.0 mAdc | ||
| V BE(sat) | 1.0 | Vdc | I C = 10 mAdc, I B = 1.0 mAdc | ||
| SMALL-SIGNAL CHARACTERISTICS | f T | 600 | MHz | I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz | |
| C obo | 3.0 | pF | V CB = 0 Vdc, I E = 0, f = 1.0 MHz | ||
| C obo | 1.7 | pF | V CB = 10 Vdc, I E = 0, f = 1.0 MHz | ||
| INPUT CAPACITANCE | C ibo | 2.0 | pF | V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz | |
| NOISE FIGURE | NF | 6.0 | dB | I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 , f = 60 MHz | |
| POWER OUTPUT | P out | 30 | mW | I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz | |
| COMMON-EMITTER AMPLIFIER POWER GAIN | G pe | 11 | dB | I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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