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Hefei Purple Horn E-Commerce Co., Ltd.

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China High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC
China High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC

  1. China High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC

High speed switching medium power PNP transistor LRC S-LBSS5250Y3T1G with AEC

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 1uA
Pd - Power Dissipation 550mW
Transition frequency(fT) 320MHz
type PNP
Number 1 PNP
Current - Collector(Ic) 2A
Collector - Emitter Voltage VCEO 50V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 50V 2A 320MHz 550mW Surface Mount SOT-89
Mfr. Part # S-LBSS5250Y3T1G
Package SOT-89
Model Number S-LBSS5250Y3T1G

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 1uA
Pd - Power Dissipation 550mW Transition frequency(fT) 320MHz
type PNP Number 1 PNP
Current - Collector(Ic) 2A Collector - Emitter Voltage VCEO 50V
Operating Temperature -55℃~+150℃ Description Bipolar (BJT) Transistor PNP 50V 2A 320MHz 550mW Surface Mount SOT-89
Mfr. Part # S-LBSS5250Y3T1G Package SOT-89
Model Number S-LBSS5250Y3T1G

Product Overview

This document describes the LBSS5250Y3T1G and S-LBSS5250Y3T1G medium power PNP transistors. These transistors offer low saturation voltage and high-speed switching capabilities. The S-prefix variant is qualified for automotive applications, meeting AEC-Q101 standards and PPAP capability. The materials comply with RoHS requirements and are Halogen Free. Primarily used as drivers, these transistors are suitable for various applications requiring efficient switching.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix only), PPAP capable (S-prefix only)

Technical Specifications

ParameterSymbolLBSS5250Y3T1G / S-LBSS5250Y3T1GUnitConditions
CollectorBase VoltageVCBO-50V
CollectorEmitter VoltageVCEO-50V
EmitterBase VoltageVEBO-6V
Collector CurrentIC-2A
Collector Current (Pulse)ICP-4A
Total Device Dissipation (FR-4 Board)PD550mW@ TA = 25C
Derate above 25C225mW/C
Thermal Resistance, JunctiontoAmbientRJA4.4C/W
Junction and Storage TemperatureTJ,Tstg-55 ~ +150C
Collector-emitter breakdown voltageBVCEO-50V(IC = -1mA)
Collector-base breakdown voltageBVCBO-50V(IC = -100A)
Emitter-base breakdown voltageBVEBO-6V(IE = -100A)
Collector Cutoff CurrentICBO-1A(VCB = -50V, IE = 0)
Emitter Cut-off CurrentIEBO-1A(VEB =-4V, IC =0)
DC Current GainHFE180 - 450(VCE = -2V, IC = -50mA)
CollectorEmitter Saturation VoltageVCE(sat)-200 ~ -400mV(IC = -700mA, IB = -35mA)
Transition FrequencyfT320MHz(VCE =-10V, IE =300mA, f=100MHz)
Collector Output CapacitanceCob22pF(VCB =-10V, IE =0A, f=1MHz)

2201121900_LRC-S-LBSS5250Y3T1G_C2941693.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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