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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Telephony and Communication Equipment PNP Silicon Transistor LRC LMBTA92LT1G
China Telephony and Communication Equipment PNP Silicon Transistor LRC LMBTA92LT1G

  1. China Telephony and Communication Equipment PNP Silicon Transistor LRC LMBTA92LT1G

Telephony and Communication Equipment PNP Silicon Transistor LRC LMBTA92LT1G

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 225mW
Transition frequency(fT) 50MHz
type PNP
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 300V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 225mW Surface Mount SOT-23
Mfr. Part # LMBTA92LT1G
Package SOT-23
Model Number LMBTA92LT1G

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
Pd - Power Dissipation 225mW Transition frequency(fT) 50MHz
type PNP Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 300V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 225mW Surface Mount SOT-23 Mfr. Part # LMBTA92LT1G
Package SOT-23 Model Number LMBTA92LT1G

Product Overview

The LESHAN RADIO COMPANY, LTD. LMBTA92LT1G and LMBTA93LT1G are PNP Silicon High Voltage Transistors designed for telephony and professional communication equipment applications. They offer high voltage capabilities and are available with an "S-" prefix for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 Qualified and PPAP Capable.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Certifications: AEC-Q101 Qualified and PPAP Capable (with S- prefix)
  • RoHS Compliance: Declared

Technical Specifications

CharacteristicSymbolLMBTA92LMBTA93UnitConditions
MAXIMUM RATINGS
CollectorEmitter VoltageV CEO300200Vdc
CollectorBase VoltageV CBO300200Vdc
EmitterBase VoltageV EBO5.05.0Vdc
Collector Current ContinuousI C500500mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation (FR 5 Board)PD225mWTA = 25C
Derate above 25C (FR 5 Board)1.8mW/C
Thermal Resistance, Junction to Ambient (FR 5 Board)RJA556C/W
Total Device Dissipation (Alumina Substrate)PD300mWTA= 25C
Derate above 25C (Alumina Substrate)2.4mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate)RJA417C/W
Junction and Storage TemperatureTJ , Tstg55 to +150C
ELECTRICAL CHARACTERISTICS
DC Current GainhFE25 4025 40(I C =1.0mAdc, V CE = 10 Vdc) Both Types; (I C = 10 mAdc, V CE = 10Vdc) Both Types
DC Current GainhFE25 25 (I C = 30mAdc, V CE =10 Vdc) LMBTA92; LMBTA93
CollectorEmitter Saturation VoltageVCE(sat) 0.5Vdc(I C = 20mAdc, I B = 2.0 mAdc)
BaseEmitter Saturation VoltageV BE(sat) 0.9Vdc(I C = 20mAdc, I B = 2.0 mAdc)
CurrentGain Bandwidth Productf T50 50 MHz(I C = 10mAdc, V CE= 20Vdc, f = 100MHz)
Collector Base CapacitanceC cb 6.0 8.0pF(V CB = 20 Vdc, I E = 0, f = 1.0 MHz)
CollectorEmitter Breakdown VoltageV(BR)CEO300 200 Vdc(IC = 1.0 mAdc, IB = 0)
CollectorEmitter Breakdown VoltageV(BR)CBO300 200 Vdc(IC = 100 Adc, IE = 0)
EmitterBase Breakdown VoltageV(BR)EBO5.0 Vdc(IE = 100 Adc, IC = 0)
Collector Cutoff CurrentICBO 0.1Adc( VCB = 200Vdc, IE = 0)
Collector Cutoff CurrentICBO 100Adc( VCB = 300Vdc, IE = 0)
Collector Cutoff CurrentICBO 100Adc( VCB = 300Vdc, IE = 0)
EmitterBase Cutoff CurrentIEBO 0.05Adc( VEB = 6.0Vdc, IC = 0)
EmitterBase Cutoff CurrentIEBO 0.05Adc( VEB = 5.0Vdc, IC = 0)

1810161814_LRC-LMBTA92LT1G_C78725.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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