| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW |
| Transition frequency(fT) | 50MHz |
| type | PNP |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 225mW Surface Mount SOT-23 |
| Mfr. Part # | LMBTA92LT1G |
| Package | SOT-23 |
| Model Number | LMBTA92LT1G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW | Transition frequency(fT) | 50MHz |
| type | PNP | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 300V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 225mW Surface Mount SOT-23 | Mfr. Part # | LMBTA92LT1G |
| Package | SOT-23 | Model Number | LMBTA92LT1G |
The LESHAN RADIO COMPANY, LTD. LMBTA92LT1G and LMBTA93LT1G are PNP Silicon High Voltage Transistors designed for telephony and professional communication equipment applications. They offer high voltage capabilities and are available with an "S-" prefix for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 Qualified and PPAP Capable.
| Characteristic | Symbol | LMBTA92 | LMBTA93 | Unit | Conditions |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | V CEO | 300 | 200 | Vdc | |
| CollectorBase Voltage | V CBO | 300 | 200 | Vdc | |
| EmitterBase Voltage | V EBO | 5.0 | 5.0 | Vdc | |
| Collector Current Continuous | I C | 500 | 500 | mAdc | |
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation (FR 5 Board) | PD | 225 | mW | TA = 25C | |
| Derate above 25C (FR 5 Board) | 1.8 | mW/C | |||
| Thermal Resistance, Junction to Ambient (FR 5 Board) | RJA | 556 | C/W | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA= 25C | |
| Derate above 25C (Alumina Substrate) | 2.4 | mW/C | |||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 417 | C/W | ||
| Junction and Storage Temperature | TJ , Tstg | 55 to +150 | C | ||
| ELECTRICAL CHARACTERISTICS | |||||
| DC Current Gain | hFE | 25 40 | 25 40 | (I C =1.0mAdc, V CE = 10 Vdc) Both Types; (I C = 10 mAdc, V CE = 10Vdc) Both Types | |
| DC Current Gain | hFE | 25 | 25 | (I C = 30mAdc, V CE =10 Vdc) LMBTA92; LMBTA93 | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.5 | Vdc | (I C = 20mAdc, I B = 2.0 mAdc) | |
| BaseEmitter Saturation Voltage | V BE(sat) | 0.9 | Vdc | (I C = 20mAdc, I B = 2.0 mAdc) | |
| CurrentGain Bandwidth Product | f T | 50 | 50 | MHz | (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) |
| Collector Base Capacitance | C cb | 6.0 | 8.0 | pF | (V CB = 20 Vdc, I E = 0, f = 1.0 MHz) |
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 300 | 200 | Vdc | (IC = 1.0 mAdc, IB = 0) |
| CollectorEmitter Breakdown Voltage | V(BR)CBO | 300 | 200 | Vdc | (IC = 100 Adc, IE = 0) |
| EmitterBase Breakdown Voltage | V(BR)EBO | 5.0 | Vdc | (IE = 100 Adc, IC = 0) | |
| Collector Cutoff Current | ICBO | 0.1 | Adc | ( VCB = 200Vdc, IE = 0) | |
| Collector Cutoff Current | ICBO | 100 | Adc | ( VCB = 300Vdc, IE = 0) | |
| Collector Cutoff Current | ICBO | 100 | Adc | ( VCB = 300Vdc, IE = 0) | |
| EmitterBase Cutoff Current | IEBO | 0.05 | Adc | ( VEB = 6.0Vdc, IC = 0) | |
| EmitterBase Cutoff Current | IEBO | 0.05 | Adc | ( VEB = 5.0Vdc, IC = 0) | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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