| Emitter-Base Voltage(Vebo) | 3V |
| Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 7GHz |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 12V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | L2SC3356LT1G |
| Package | SOT-23 |
| Model Number | L2SC3356LT1G |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 3V | Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 7GHz |
| type | NPN | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 12V | Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23 | Mfr. Part # | L2SC3356LT1G |
| Package | SOT-23 | Model Number | L2SC3356LT1G |
The L2SC3356LT1 is an NPN silicon epitaxial transistor specifically engineered for low-noise amplifier applications across VHF, UHF, and CATV bands. It offers excellent dynamic range and favorable current characteristics, making it suitable for high-frequency amplification tasks.
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Collector Cutoff Current | ICBO | 1.0 | μA | VCB = 10 V, IE = 0 | ||
| Emitter Cutoff Current | IEBO | 1.0 | μA | VEB = 1.0 V, IC = 0 | ||
| DC Current Gain | hFE | 82 | 170 | 270 | VCE = 3 V, IC = 10 mA | |
| Gain Bandwidth Product | fT | 7 | GHz | VCE = 10 V, IC = 20 mA | ||
| Feed-Back Capacitance | Cre** | 0.55 | 1.0 | pF | VCB = 10 V, IE = 0, f = 1.0 MHz | |
| Insertion Power Gain | |S21e|2 | 2 | 11.5 | dB | VCE = 10 V, IC = 20 mA, f = 1.0 GHz | |
| Noise Figure | NF | 1.1 | 2.0 | dB | VCE = 10 V, IC = 7 mA, f = 1.0 GHz | |
| Collector to Base Voltage | VCBO | 20 | V | Absolute Maximum Ratings | ||
| Collector to Emitter Voltage | VCEO | 12 | V | Absolute Maximum Ratings | ||
| Emitter to Base Voltage | VEBO | 3.0 | V | Absolute Maximum Ratings | ||
| Collector Current | IC | 100 | mA | Absolute Maximum Ratings | ||
| Total Power Dissipation | PT | 200 | mW | Absolute Maximum Ratings (TA = 25 °C) | ||
| Junction Temperature | Tj | 150 | °C | Absolute Maximum Ratings | ||
| Storage Temperature | Tstg | -65 | +150 | °C | Absolute Maximum Ratings |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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