Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 15nA |
| Pd - Power Dissipation | 250mW |
| Transition frequency(fT) | 100MHz |
| type | - |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 65V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor 65V 100mA 100MHz 250mW Surface Mount SOT-363 |
| Mfr. Part # | S-LBC856BDW1T1G |
| Package | SOT-363 |
| Model Number | S-LBC856BDW1T1G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 15nA |
| Pd - Power Dissipation | 250mW | Transition frequency(fT) | 100MHz |
| type | - | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 65V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor 65V 100mA 100MHz 250mW Surface Mount SOT-363 | Mfr. Part # | S-LBC856BDW1T1G |
| Package | SOT-363 | Model Number | S-LBC856BDW1T1G |
The LBC856BDW1T1G and S-LBC856BDW1T1G are dual general-purpose transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variants are AEC-Q101 qualified and PPAP capable. These transistors are compliant with RoHS requirements and Halogen Free materials.
| Model | Description | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Emitter-Base Voltage (VEBO) | Collector Current (Continuous) (IC) | Total Device Dissipation (PD) | Thermal Resistance, Junction to Ambient (RJA) | Junction and Storage Temperature (TJ, Tstg) | Collector Cutoff Current (ICBO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Base-Emitter Saturation Voltage (VBE(sat)) | Base-Emitter Voltage (VBE(on)) | Current-Gain Bandwidth Product (fT) | Output Capacitance (Cob) | Noise Figure (NF) |
| LBC856BDW1T1G S-LBC856BDW1T1G | Dual General Purpose Transistors | -80 V | -65 V | -5 V | -100 mA | 250 mW | 500 C/W | -55+150 C | -15 nA -4 nA (TA=150C) | 290 - 475 320 (IC=-2.0 mA, VCE=-5.0 V) | -0.65 V -0.9 V (IC=-100 mA, IB=-5.0 mA) | -0.7 V -0.82 V (IC=-100 mA, IB=-5.0 mA) | -0.6 V -0.75 V (IC=-10 mA, VCE=-5.0 V) | 100 MHz | 10 pF | 4.5 dB |
| LBC856BDW1T3G | Dual General Purpose Transistors | -80 V | -65 V | -5 V | -100 mA | 250 mW | 500 C/W | -55+150 C | -15 nA -4 nA (TA=150C) | 290 - 475 320 (IC=-2.0 mA, VCE=-5.0 V) | -0.65 V -0.9 V (IC=-100 mA, IB=-5.0 mA) | -0.7 V -0.82 V (IC=-100 mA, IB=-5.0 mA) | -0.6 V -0.75 V (IC=-10 mA, VCE=-5.0 V) | 100 MHz | 10 pF | 4.5 dB |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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