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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Low noise PNP silicon transistor LRC LMBT5087LT1G in SOT23 package for general
China Low noise PNP silicon transistor LRC LMBT5087LT1G in SOT23 package for general

  1. China Low noise PNP silicon transistor LRC LMBT5087LT1G in SOT23 package for general

Low noise PNP silicon transistor LRC LMBT5087LT1G in SOT23 package for general

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Emitter-Base Voltage(Vebo) 3V
Current - Collector Cutoff 10uA
Pd - Power Dissipation 300mW
Transition frequency(fT) 40MHz
type PNP
Current - Collector(Ic) 50mA
Collector - Emitter Voltage VCEO 50V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 300mW Surface Mount SOT-23
Mfr. Part # LMBT5087LT1G
Package SOT-23
Model Number LMBT5087LT1G

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 3V Current - Collector Cutoff 10uA
Pd - Power Dissipation 300mW Transition frequency(fT) 40MHz
type PNP Current - Collector(Ic) 50mA
Collector - Emitter Voltage VCEO 50V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 300mW Surface Mount SOT-23 Mfr. Part # LMBT5087LT1G
Package SOT-23 Model Number LMBT5087LT1G

Product Overview

The LMBT5087LT1G is a low-noise PNP silicon transistor in a SOT-23 (TO-236AB) package. It is designed for general-purpose applications requiring low noise characteristics.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Device Marking: 2Q
  • Certifications: RoHS compliant

Technical Specifications

CharacteristicSymbolValueUnitNotes
Maximum RatingsV CEO 50Vdc
V CBO 50Vdc
V EBO 3.0Vdc
Collector Current ContinuousI C 50mAdc
Total Device DissipationP D225mWRF-5 Board, T A =25 C
Derate above 25C1.8mW/C
Thermal Resistance, Junction to AmbientR JA556C/WRF-5 Board
R JA417C/WAlumina Substrate
Junction and Storage TemperatureT J , T stg55 to +150C
OFF CHARACTERISTICS
CollectorEmitter Breakdown VoltageV (BR)CEO 50Vdc(I C = 1.0 mAdc, I B = 0)
CollectorBase Breakdown VoltageV (BR)CBO 50Vdc(I C = 100 Adc, I E = 0)
Collector Cutoff CurrentI CBO10nAdc(V CB = 10 Vdc, I E= 0)
I CBO50nAdc(V CB = 35 Vdc, I E= 0)
ON CHARACTERISTICS
DC Current Gainh FE250 800(I C = 100Adc, V CE = 5.0 Vdc)
h FE250 (I C = 1.0 mAdc, V CE = 5.0 Vdc)
h FE250 (I C = 10 mAdc, V CE = 5.0 Vdc)
CollectorEmitter Saturation VoltageV CE(sat) 0.3Vdc(I C = 10 mAdc, I B = 1.0 mAdc)
BaseEmitter Saturation VoltageV BE(sat) 0.85Vdc(I C = 10 mAdc, I B = 1.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Productf T40MHz(I C = 500 Adc, V CE= 5.0 Vdc, f = 20 MHz)
Output CapacitanceC obo4.0pF(V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz)
SmallSignal Current Gainh fe250 900(I C= 1.0mAdc, V CE = 5.0Vdc, f = 1.0 kHz)
Noise FigureN F2.0dB(I C = 20 mAdc, V CE= 5.0 Vdc,Rs=10k, f = 1.0 kHz)
N F2.0dB(I C = 100Adc, V CE= 5.0 Vdc,Rs=3.0k, f = 1.0 kHz)

2212131909_LRC-LMBT5087LT1G_C5273113.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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