Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 4V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW |
| Transition frequency(fT) | 50MHz |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 225mW Surface Mount SOT-23 |
| Mfr. Part # | S-LMBTA56LT1G |
| Package | SOT-23 |
| Model Number | S-LMBTA56LT1G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 4V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW | Transition frequency(fT) | 50MHz |
| type | PNP | Number | 1 PNP |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 225mW Surface Mount SOT-23 |
| Mfr. Part # | S-LMBTA56LT1G | Package | SOT-23 |
| Model Number | S-LMBTA56LT1G |
The LMBTA56LT1G and S-LMBTA56LT1G are PNP Silicon Driver Transistors designed for automotive and general applications. The 'S-' prefix denotes compliance with unique site and control change requirements, AEC-Q101 qualification, and PPAP capability. These devices are RoHS and Halogen Free compliant.
| Parameter | Symbol | LMBTA56LT1G | S-LMBTA56LT1G | Unit | Notes |
| CollectorEmitter Voltage | VCEO | -80 | -80 | V | |
| CollectorBase Voltage | VCBO | -80 | -80 | V | |
| EmitterBase Voltage | VEBO | -4 | -4 | V | |
| Collector Current Continuous | IC | -500 | -500 | mA | |
| Total Device Dissipation, FR5 Board | PD | 1.8 | 1.8 | mW | @ TA = 25C |
| Derate above 25C | 556 | 556 | mW/C | ||
| JunctiontoAmbient Thermal Resistance | RJA | 225 | 225 | C/W | FR5 = 1.00.750.062 in. |
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | C | |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -80 | -80 | V | IC = -1 mA, IB = 0 |
| EmitterBase Breakdown Voltage | VBR(EBO) | -4 | -4 | V | IE = -100 A, IC = 0 |
| CollectorBase Breakdown Voltage | VBR(CBO) | -80 | -80 | V | IC= -100A, IE= 0 |
| Collector Cutoff Current | ICES | -0.1 | -0.1 | A | VCE = - 60 V, IE = 0 |
| Collector Cutoff Current | ICEO | -10 | -10 | A | VCE-80V, IB=0 |
| Emitter-Base cut-off current | IEBO | -100 | -100 | nA | IC = 0, VEB = -6V |
| DC Current Gain | HFE | 100 | 100 | IC = -10 mA, VCE = -1 V | |
| DC Current Gain | HFE | 100 | 100 | IC = -100 mA, VCE = -1 V | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.25 | -0.25 | V | IC = -100 mA, IB = -10 mA |
| Base-Emitter turn on voltage | VBE(on) | -1.2 | -1.2 | V | IC = -100 mA, VCE = -1 V |
| CurrentGain Bandwidth Product | fT | 50 | 50 | MHz | IC = -100mA, VCE= -1V, f = 100MHz |
| Output Capacitance | Cobo | 5.3 | 5.3 | pF | VCB=10V,IE=0,f=1MHz |
| Input Capacitance | Cibo | 78 | 78 | pF | VEB=0.5V,IC=0,f=1MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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