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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Plastic Encapsulated PNP Transistor Model JSMSEMI 2SB647A for Electronic Circuit
China Plastic Encapsulated PNP Transistor Model JSMSEMI 2SB647A for Electronic Circuit

  1. China Plastic Encapsulated PNP Transistor Model JSMSEMI 2SB647A for Electronic Circuit

Plastic Encapsulated PNP Transistor Model JSMSEMI 2SB647A for Electronic Circuit

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Current - Collector Cutoff 10uA
Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 750mW
Transition frequency(fT) 140MHz
type PNP
Current - Collector(Ic) 1A
Collector - Emitter Voltage VCEO 80V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 80V 1A 140MHz 750mW Through Hole TO-92L
Mfr. Part # 2SB647A
Package TO-92L
Model Number 2SB647A

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 10uA Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 750mW Transition frequency(fT) 140MHz
type PNP Current - Collector(Ic) 1A
Collector - Emitter Voltage VCEO 80V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 80V 1A 140MHz 750mW Through Hole TO-92L Mfr. Part # 2SB647A
Package TO-92L Model Number 2SB647A

Product Overview

The 2SB647A is a plastic-encapsulated PNP transistor designed for low-frequency power amplifier applications. It is a complementary pair with the 2SD667, offering reliable performance for various electronic circuits.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Material: Plastic-Encapsulated Transistors
  • Color: Solid dot = Green molding compound device, if none, the normal device

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-10A,IE=0-120V
Collector-emitter breakdown voltageV(BR)CEOIC=-1mA,IB=0-80V
Emitter-base breakdown voltageV(BR)EBOIE=-10A,IC=0-5V
Collector cut-off currentICBOVCB=-100V,IE=0-10A
DC current gainhFE(1)VCE=-5V, IC=-150mA60320
DC current gainhFE(2)VCE=-5V, IC=-500mA30
Collector-emitter saturation voltageVCE(sat)IC=-500mA,IB=-50mA-1V
Base-emitter voltageVBEVCE=-5V, IC=-150mA-1.5V
Collector output capacitanceCobVCB=-10V,IE=0, f=1MHz20pF
Transition frequencyfTVCE=-5V,IC=-150mA140MHz
Collector Power DissipationPCTa=25750mW
Thermal Resistance From Junction To AmbientRJA167/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55150

2401051657_JSMSEMI-2SB647A_C5356106.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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